Ausgabe 6/2020
Inhalt (16 Artikel)
Impedance Characteristics of γ-Irradiated (TlGaSe2)1 –x(TlInS2)x Solid Solutions
R. M. Sardarly, F. T. Salmanov, N. A. Aliyeva, R. M. Abbasli
Charge-Transfer Features in Zinc Sulfide Doped Layers in a Low-Frequency Alternating Electric Field
V. T. Avanesyan, A. B. Zharkoy, A. V. Rakina
AC Electrical Conductivity of FeGaInSe4
N. N. Niftiyev, F. M. Mammadov, M. B. Muradov
Optical Properties and Critical Points of PbSe Nanostructured Thin Films
M. N. Huseynaliyev, S. N. Yasinova, D. N. Jalilli, S. I. Mekhtiyeva
Influence of Ni-Doping in ZnO Thin Films Coated on Porous Silicon Substrates and ZnO|PS Based Hetero-Junction Diodes
V. L. Priya, N. Prithivikumaran
Electronic Properties of Silicene Films Subjected to Neutron Transmutation Doping
A. E. Galashev, A. S. Vorob’ev
MBE-Grown InxGa1 –xAs Nanowires with 50% Composition
V. G. Dubrovskii, R. R. Reznik, N. V. Kryzhanovskaya, I. V. Shtrom, E. D. Ubyivovk, I. P. Soshnikov, G. E. Cirlin
Formation of a Two-Phase Structure in CH3NH3PbI3 Organometallic Perovskite
D. V. Amasev, V. G. Mikhalevich, A. R. Tameev, Sh. R. Saitov, A. G. Kazanskii
Influence of Hydrogen on the Impedance of Pd/Oxide/InP Structures
V. A. Shutaev, E. A. Grebenshchikova, V. G. Sidorov, M. E. Kompan, Yu. P. Yakovlev
Atomic Carbon Transport between the Rh Surface and Bulk in Graphene Formation and Destruction
E. V. Rut’kov, E. Yu. Afanas’eva, N. R. Gall
Correcting the Characteristics of Silicon Photodiodes by Ion Implantation
V. E. Asadchikov, I. G. Dyachkova, D. A. Zolotov, F. N. Chukhovskii, E. V. Nikitina
Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching
L. K. Markov, I. P. Smirnova, M. V. Kukushkin, A. S. Pavluchenko
Ultimate Lasing Temperature of Microdisk Lasers
A. E. Zhukov, N. V. Kryzhanovskaya, E. I. Moiseev, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Nadtochiy, M. V. Maximov
Solar-Blind UV Detectors Based on β-Ga2O3 Films
V. M. Kalygina, A. V. Almaev, V. A. Novikov, Yu. S. Petrova
Silicon Light-Emitting Diodes with Luminescence from (113) Defects
A. E. Kalyadin, K. F. Shtel’makh, P. N. Aruev, V. V. Zabrodskii, K. V. Karabeshkin, E. I. Shek, N. A. Sobolev
Impact of Carrier Gas on the GaN Layers Properties Grown on (001) and (11n) GaAs Substrates by AP-MOVPE: Comparative Study
J. Laifi, A. Bchetnia