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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 21/2019

30-09-2019

Insulator–metal transition and ultrafast crystallization of Ga40Sb60/Sn15Sb85 multiple interfacial nanocomposite films

Authors: Xuan Guo, Yifeng Hu, Qingqian Chou, Tianshu Lai

Published in: Journal of Materials Science: Materials in Electronics | Issue 21/2019

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Abstract

The phase change behavior of Ga40Sb60/Sn15Sb85 multiple interfacial film was studied systematically for its application in phase change memory. The thermal stability of amorphous state was evaluated using the Arrhenius formulas. The evolution of phase structure indicates that the Sb phase exists in the Sb-rich Ga40Sb60/Sn15Sb85, Ga40Sb60 and Sn15Sb85 films. The change in density and thickness during crystallization was obtained by X-ray reflectance. The nanoscale change in roughness of the Ga40Sb60/Sn15Sb85 film was confirmed by atomic force microscopy. The rate for crystallization and amorphization transformation was measured by a picosecond laser pump-probe system. The phase change memory device based on [Ga40Sb60 (7 nm)/Sn15Sb85 (3 nm)]5 thin film was fabricated. An ultra-fast switching and low power were achieved for Ga40Sb60/Sn15Sb85 multiple interfacial film.
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Metadata
Title
Insulator–metal transition and ultrafast crystallization of Ga40Sb60/Sn15Sb85 multiple interfacial nanocomposite films
Authors
Xuan Guo
Yifeng Hu
Qingqian Chou
Tianshu Lai
Publication date
30-09-2019
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 21/2019
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-02290-0

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