Issue 2/2002
Content (11 Articles)
Regular Issue Paper
InP-based AllnAs/GaAs0.51Sb0.49/GaInAs single heterojunction bipolar transistor for high-speed and RF wireless applications
Changhyun Yi, Tong-Ho Kim, April S. Brown
Regular Issue Paper
Donor-acceptor interactions in Al0.5In0.5P
P. N. Grillot, S. A. Stockman, J. -W. Huang, S. S. Yi
Regular Issue Paper
Highly concentrated ozone gas supplied at an atmospheric pressure condition as a new oxidizing reagent for the formation of SiO2 thin film on Si
Kunihiko Koike, Shingo Ichimura, Akira Kurokawa, Ken Nakamura
Regular Issue Paper
Point defects generated by direct-wafer bonding of silicon
L. Dózsa, B. Szentpáli, D. Pasquariello, K. Hjort
Regular Issue Paper
The determination of the interface-state density distribution from the capacitance-frequency measurements in Au/n-Si schottky barrier diodes
E. Ayyildiz, Ç. Nuho Lu, A Türüt
Regular Issue Paper
Characterization of ultrathin gate dielectrics formed by in-situ steam generation with nitrogen postprocessing
A. Karamcheti, V. H. C. Watt, H. N. Al-Shareef, T. Y. Luo, M. D. Jackson, H. R. Huff, C. Steinbrüchel
Regular Issue Paper
Pulsed-magnetron-sputtered low-temperature indium tin oxide films for flat-panel display applications
William J. Lee, Yean-Kuen Fang, Jyh-Jier Ho, Chin-Ying Chen, Rung-Ywan Tsai, Daoyang Huang, Fang C. Ho, H. W. Chou, C. C. Chen
Regular Issue Paper
Joint shape, microstructure, and shear strength of lead-free solder joints with different component terminations
Shawkret Ahat, Huang Weidong, Sheng Mei, Luo Le
Regular Issue Paper
Low-cycle fatigue behavior and mechanisms of a lead-free solder 96.5Sn/3.5Ag
Chaosuan Kanchanomai, Yukio Miyashita, Yoshiharu Mutoh
Regular Issue Paper
Interfacial reactions in In-Sn/Ni couples and phase equilibria of the In-Sn-Ni system
Ching-Yu Huang, Sinn-Wen Chen
Regular Issue Paper
Determination of the eutectic structure in the Ag-Cu-Sn system
Daniel Lewis, Sarah Allen, Michael Notis, Adam Scotch