Skip to main content
Top

Journal of Electronic Materials

Issue 9/2000

Content (11 Articles)

Regular Issue Paper

Reciprocal space mapping of ordered domains in InxGa1−xP

R. R. Hess, C. D. Moore, R. L. Forrest, R. T. Nielsen, M. S. Goorsky

Regular Issue Paper

Iron and manganese doped zinc-blende GaN

C. Y. Fong, V. A. Gubanov, C. Boekema

Regular Issue Paper

Bulk single crystal growth of silicon-germanium

Richard H. Deitch, Stephen H. Jones, Thomas G. Digges Jr.

Regular Issue Paper

Etch characteristics of GaN and BN materials in chlorine-based plasmas

N. Medelci, A. Tempez, D. Starikov, N. Badi, I. Berishev, A. Bensaoula

Regular Issue Paper

Development of a low-cycle fatigue life curve for 80In15Pb5Ag

L. K. Edwards, W. A. Nixon, R. S. Lakes

Regular Issue Paper

Increased lateral oxidation rates of AllnAs on InP using short-period superlattices

E. Hall, A. Huntington, R. L. Naone, H. Kroemer, L. A. Coldren

Regular Issue Paper

Effect of aging on the microstructure and shear strength of SnPbAg/Ni-P/Cu and SnAg/Ni-P/Cu solder joints

Shawkret Ahat, Liguang Du, Mei Sheng, Le Luo, Wolfgang Kempe, Juergen Freytag

Erratum

STM probe-assisted site-control of self-organized InAs quantum dots on GaAs surfaces

Shigeru Kohmoto, Hitoshi Nakamura, Tomonori Ishikawa, Kiyoshi Asakawa