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Semiconductors
Published in: Semiconductors 5/2018

01-05-2018 | XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology

Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing

Authors: A. V. Vasev, M. A. Putyato, V. V. Preobrazhenskii, A. K. Bakarov, A. I. Toropov

Published in: Semiconductors | Issue 5/2018

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previous article Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy
next article Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE

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Metadata
Title
Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing
Authors
A. V. Vasev
M. A. Putyato
V. V. Preobrazhenskii
A. K. Bakarov
A. I. Toropov
Publication date
01-05-2018
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 5/2018
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782618050354

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