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01-05-2018 | XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology

Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy

Authors: S. N. Timoshnev, A. M. Mizerov, M. S. Sobolev, E. V. Nikitina

Published in: Semiconductors | Issue 5/2018

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previous article Effect of Epitaxial Alignment on Electron Transport from Quasi-Two-Dimensional Iron Silicide α-FeSi2 Nanocrystals Into p-Si(001)

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Title: Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy
Authors: S. N. Timoshnev
A. M. Mizerov
M. S. Sobolev
E. V. Nikitina
Publication date: 01-05-2018
Publisher: Pleiades Publishing
Published in: Semiconductors / Issue 5/2018
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI: https://doi.org/10.1134/S1063782618050342

XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization

Composition and Band Structure of the Native Oxide Nanolayer on the Ion Beam Treated Surface of the GaAs Wafer

XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology

Effect of Epitaxial Alignment on Electron Transport from Quasi-Two-Dimensional Iron Silicide α-FeSi2 Nanocrystals Into p-Si(001)

XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization

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Other articles of this Issue 5/2018

Composition and Band Structure of the Native Oxide Nanolayer on the Ion Beam Treated Surface of the GaAs Wafer

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