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Semiconductors
Published in: Semiconductors 5/2018

01-05-2018 | XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology

Effect of Epitaxial Alignment on Electron Transport from Quasi-Two-Dimensional Iron Silicide α-FeSi2 Nanocrystals Into p-Si(001)

Authors: I. A. Tarasov, M. V. Rautskii, I. A. Yakovlev, M. N. Volochaev

Published in: Semiconductors | Issue 5/2018

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previous article MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates
next article Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy

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Metadata
Title
Effect of Epitaxial Alignment on Electron Transport from Quasi-Two-Dimensional Iron Silicide α-FeSi2 Nanocrystals Into p-Si(001)
Authors
I. A. Tarasov
M. V. Rautskii
I. A. Yakovlev
M. N. Volochaev
Publication date
01-05-2018
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 5/2018
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782618050330

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