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Semiconductors
Published in: Semiconductors 5/2018

01-05-2018 | XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology

MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates

Authors: R. R. Reznik, K. P. Kotlyar, I. P. Soshnikov, S. A. Kukushkin, A. V. Osipov, G. E. Cirlin

Published in: Semiconductors | Issue 5/2018

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Metadata
Title
MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates
Authors
R. R. Reznik
K. P. Kotlyar
I. P. Soshnikov
S. A. Kukushkin
A. V. Osipov
G. E. Cirlin
Publication date
01-05-2018
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 5/2018
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782618050251

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