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Published in: Microsystem Technologies 7/2015

01-07-2015 | Technical Paper

Label free electrical detection of prostate specific antigen with millimeter grade biomolecule-gated AlGaN/GaN high electron mobility transistors

Authors: Jia-dong Li, Jun-jie Cheng, Bin Miao, Xiao-wei Wei, Jie Xie, Jin-cheng Zhang, Zhi-qiang Zhang, Hai-Wen Li, Dong-min Wu

Published in: Microsystem Technologies | Issue 7/2015

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Abstract

AlGaN/GaN high electron mobility transistor (HEMT) was successfully fabricated by complementary metal-oxide semiconductor field effect transistor-compatible fabrication method, and the label-free, electrical detection of prostate specific antigen in real time using the biomolecule-gate AlGaN/GaN HEMT sensor was presented. It shows a rapid response when target prostate biomarker in buffer solution was added to the antibody-immobilized sensing area. The linear range for target prostate specific antigen detection has been demonstrated from 0.1 pg/ml to 10.269 ng/ml and a low detection below 0.1 pg/ml level is estimated, which is the best result of AlGaN/GaN HEMT biosensor for prostate specific antigen (PSA) detection till now. The sensitivity of 0.027 % is determined for 0.1 pg/ml prostate specific antigen solution. The electrical result of the biomolecule-gated AlGaN/GaN HEMT biosensor suggested that this biosensor might be a useful tool for the prostate cancer screening.

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Metadata
Title
Label free electrical detection of prostate specific antigen with millimeter grade biomolecule-gated AlGaN/GaN high electron mobility transistors
Authors
Jia-dong Li
Jun-jie Cheng
Bin Miao
Xiao-wei Wei
Jie Xie
Jin-cheng Zhang
Zhi-qiang Zhang
Hai-Wen Li
Dong-min Wu
Publication date
01-07-2015
Publisher
Springer Berlin Heidelberg
Published in
Microsystem Technologies / Issue 7/2015
Print ISSN: 0946-7076
Electronic ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-014-2303-8

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