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Published in: Journal of Materials Science: Materials in Electronics 16/2017

24-04-2017

Laser ablated lead free (Na, K) NbO3 thin films with excess alkali-content

Authors: Md Kashif Shamim, Seema Sharma, R. J. Choudhary

Published in: Journal of Materials Science: Materials in Electronics | Issue 16/2017

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Abstract

Lead free (Na0.5K0.5) NbO3 (NKN) being hygroscopic in nature is very difficult to be fabricated with enhanced properties in thin films. To maintain stoichiometry 0, 5 and 10% mole excess of Na on A-site were added on NKN bulk targets. The perovskite ABO3 crystal structure incorporating 0, 5 and 10% excess alkali ions were grown on Pt/Ti/SiO2/Si substrate by pulsed laser deposition, using stoichiometric high density ceramic targets. X-ray diffraction peaks and Raman scattering spectra suggest the formation of single phase of the film in monoclinic phase. The dielectric properties and leakage current is improved with increasing amount of Na concentration. The reduction in leakage current with addition of excess Na concentration may be due to increase in grain size decrease in the connection of grain boundaries with grains. The impedance spectra of the film shows single dielectric relaxation which is non-debye type and the relaxation frequency is shifted to higher side at higher frequency.

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Metadata
Title
Laser ablated lead free (Na, K) NbO3 thin films with excess alkali-content
Authors
Md Kashif Shamim
Seema Sharma
R. J. Choudhary
Publication date
24-04-2017
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 16/2017
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-017-6962-y

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