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Published in:
Properties and Advantages of Gallium Nitride Read chapter Read first chapter

2017 | OriginalPaper | Chapter

4. Lateral GaN Devices for Power Applications (from kHz to GHz)

Authors : Umesh K. Mishra, Matthew Guidry

Published in: Power GaN Devices

Publisher: Springer International Publishing

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Abstract

GaN and related materials have exploded onto the semiconductor landscape because of the broad range of applications that they address. The most visible is that it has enabled the solid-state lighting revolution with GaN-based LEDs now replacing incandescent and fluorescent light bulbs because of both their low cost and return on investment due to electricity savings afforded by their enhanced efficiency. GaN has also enabled full color displays from cell phones to stadiums, automotive and airplane mood cabin lighting to head lamps based on LEDs and most recently lasers. These are just a few of the applications that have created a >$10B and rapidly expanding market. In the wake of the photonics applications, GaN electronic applications are now emerging in their own right to serve a multi-billion market from cell phone infrastructure to RADAR and communications to power conversion applications. The dominant device that is used for electronic applications is the AlGaN/GaN HEMT. This chapter will address the materials aspects (briefly) and the various device designs that are of value in different applications.

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Metadata
Title
Lateral GaN Devices for Power Applications (from kHz to GHz)
Authors
Umesh K. Mishra
Matthew Guidry
Copyright Year
2017
Book
Power GaN Devices

Print ISBN: 978-3-319-43197-0

Electronic ISBN: 978-3-319-43199-4

Copyright Year: 2017

DOI
https://doi.org/10.1007/978-3-319-43199-4_4