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2017 | OriginalPaper | Chapter

3. GaN-on-Silicon CMOS-Compatible Process

Authors : Denis Marcon, Steve Stoffels

Published in: Power GaN Devices

Publisher: Springer International Publishing

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Abstract

To achieve high-volume manufacturing of GaN technology, GaN-on-Si wafers need to be processed in highly efficient and productive CMOS fabs. To achieve this objective, the GaN-on-Si epitaxy and processing technology need to be adapted to the strict standard of CMOS fabs. In this chapter, the challenges related to the growth and (Au-free) processing of 200-mm GaN-on-Si wafers in a CMOS fab are analyzed.

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previous chapter Substrates and Materials

next chapter Lateral GaN Devices for Power Applications (from kHz to GHz)

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Title: GaN-on-Silicon CMOS-Compatible Process
Authors: Denis Marcon
Steve Stoffels
Publisher: Springer International Publishing
Book: Power GaN Devices
Print ISBN: 978-3-319-43197-0

Electronic ISBN: 978-3-319-43199-4

Copyright Year: 2017
DOI: https://doi.org/10.1007/978-3-319-43199-4_3