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Published in:
Properties and Advantages of Gallium Nitride Read chapter Read first chapter

2017 | OriginalPaper | Chapter

2. Substrates and Materials

Author : Stacia Keller

Published in: Power GaN Devices

Publisher: Springer International Publishing

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Abstract

The choice of substrate and the material requirements for GaN-based power transistors for switching applications strongly depend on the device architecture. While to date most efforts have been directed toward the fabrication of lateral devices, vertical device layouts have recently gained interest, catalyzed by the progress in the development of larger size bulk GaN substrates. The vertical devices have the advantage that the high fields are held within the bulk of the material rather than on the surface. Large-area GaN substrates, however, are still very expensive, making a lateral device layout on a foreign substrate such as silicon, which is available in wafer sizes up to 12″, currently more attractive.

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Metadata
Title
Substrates and Materials
Author
Stacia Keller
Copyright Year
2017
Book
Power GaN Devices

Print ISBN: 978-3-319-43197-0

Electronic ISBN: 978-3-319-43199-4

Copyright Year: 2017

DOI
https://doi.org/10.1007/978-3-319-43199-4_2