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Optical and Quantum Electronics

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01-12-2023

Lattice dynamic, optical, and mechanical properties of nanostructured gallium antimonide (GaSb) semiconductor under the effect of pressure

Authors: Monira G. Ghoniem, Fatima A. Adam, Babiker Y. Abdulkhair, A. M. Abdelghany, Elkenany B. Elkenany

Published in: Optical and Quantum Electronics | Issue 13/2023

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Abstract

The optical, mechanical, and lattice dynamic properties of nanostructured GaSb semiconductor have been determined. The influence of pressure on the Longitudinal and transversal sound velocities, reflectivity, phonon frequencies, micro-hardness, and the transverse effective charge has been investigated. The dependencies of bond-stretching force constant, bond-bending force constant, susceptibility, Cauchy ratio, Born ratio, effective charge, and ionicity on the pressure of zinc-blende GaSb semiconductor are also been studied. The calculations in the present work have been performed using the pseudo-potential method (EPM). Comparisons with the available experiment and other works show reasonable agreement. The studied properties of the considered material could be useful in optoelectronic applications.

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Title: Lattice dynamic, optical, and mechanical properties of nanostructured gallium antimonide (GaSb) semiconductor under the effect of pressure
Authors: Monira G. Ghoniem
Fatima A. Adam
Babiker Y. Abdulkhair
A. M. Abdelghany
Elkenany B. Elkenany
Publication date: 01-12-2023
Publisher: Springer US
Published in: Optical and Quantum Electronics / Issue 13/2023
Print ISSN: 0306-8919
Electronic ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-023-05421-4

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