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Journal of Electronic Materials
Published in: Journal of Electronic Materials 4/2002

01-04-2002 | Regular Issue Paper

Localization of excited carriers in organometallic vapor-phase epitaxial grown ZnxCd1−xSe epilayers with partial existence of lateral compositionally modulated superlattice

Authors: X. B. Zhang, K. S. Wong, S. K. Hark

Published in: Journal of Electronic Materials | Issue 4/2002

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previous article Valence-band discontinuities between InGaN and GaN evaluated by capacitance-voltage characteristics of p-InGaN/n-GaN diodes
next article Thermodynamic modeling of native point defects and dopants of GaN semiconductors

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Metadata
Title
Localization of excited carriers in organometallic vapor-phase epitaxial grown ZnxCd1−xSe epilayers with partial existence of lateral compositionally modulated superlattice
Authors
X. B. Zhang
K. S. Wong
S. K. Hark
Publication date
01-04-2002
Publisher
Springer-Verlag
Published in
Journal of Electronic Materials / Issue 4/2002
Print ISSN: 0361-5235
Electronic ISSN: 1543-186X
DOI
https://doi.org/10.1007/s11664-002-0150-3

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