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Published in:
01-03-2010
Low temperature sintering of Li1.1Nb0.58Ti0.5O3-xBi2O3 dielectric with adjustable temperature coefficient
Published in: Journal of Materials Science: Materials in Electronics | Issue 3/2010
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Abstract
Ceramics of Li1.1Nb0.58Ti0.5O3-xBi2O3 with low sintering temperature have been prepared by the solid-solution reaction method using B2O3 (2 wt% added) as sintering aid. For all compounds, the sintering temperature achieves 900 °C. Microstructure and dielectric properties of Li1.1Nb0.58Ti0.5O3-2 wt% B2O3-xBi2O3 (LNT-B-xBi) ceramics have been investigated. The X-ray diffraction patterns indicate for higher Bi2O3 content (x = 0.1 mol%) that the material is composed by two phases identified as M-phase and Bi4Ti3O12. The Li1.1Nb0.58Ti0.5O3 + 0.15 mol% Bi2O3 composition sintered at 900 °C with B2O3 addition exhibits attractive dielectric properties (ε
r = 59.68, tan δ = 1.2×10−4 and a temperature coefficient of the relative permittivity near zero) at 1 MHz. It is also shown that the introduction of Bi2O3 can tune the temperature coefficient of the relative permittivity. All dielectric properties lead this system compatible to manufacture sliver based electrodes multilayer dielectric devices.