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Semiconductors
Published in: Semiconductors 5/2013

01-05-2013 | Electronic Properties of Semiconductors

Magnetic properties of (FeIn2S4)1 − x (In2S3) x alloy single crystals

Authors: I. V. Bodnar, M. A. Novikova, S. V. Trukhanov

Published in: Semiconductors | Issue 5/2013

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previous article Dark-current relaxation in MnGa2Se4 single crystals
next article The mechanism of charge transfer in Bi2(Te0.9Se0.1)3 solid solution thin films

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Metadata
Title
Magnetic properties of (FeIn2S4)1 − x (In2S3) x alloy single crystals
Authors
I. V. Bodnar
M. A. Novikova
S. V. Trukhanov
Publication date
01-05-2013
Publisher
SP MAIK Nauka/Interperiodica
Published in
Semiconductors / Issue 5/2013
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782613050096

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Fabrication, Treatment, and Testing of Materials and Structures

Features of ZnS-powder doping with a Mn impurity during synthesis and subsequent annealing

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells

Electronic Properties of Semiconductors

Dark-current relaxation in MnGa2Se4 single crystals

Surfaces, Interfaces, and Thin Films

Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions

Surfaces, Interfaces, and Thin Films

The mechanism of charge transfer in Bi2(Te0.9Se0.1)3 solid solution thin films

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