Advertisement
Published in:
19-01-2018
Microstructure and thermoelectric properties of un-doped Mg2Si1−xSnx single crystals prepared by high temperature gradient directional solidification
Published in: Journal of Materials Science: Materials in Electronics | Issue 8/2018
Log inActivate our intelligent search to find suitable subject content or patents.
Select sections of text to find matching patents with Artificial Intelligence. powered by
Select sections of text to find additional relevant content using AI-assisted search. powered by
Abstract
Un-doped single crystals of Mg2Si1−xSnx (x = 0.55, 0.65 and 0.75) were successfully prepared by high temperature gradient directional solidification (HGDS). In the Mg2Si0.45Sn0.55 crystal, Mg2Si precipitates were observed in the solidified microstructure, and no precipitates in the single crystals of Mg2Si0.35Sn0.65 and Mg2Si0.25Sn0.75. By measuring the electronic transport properties of these three single crystals, the Mg2Si0.35Sn0.65 has a largest PF value, about 2.5 times more than that of the nanocrystalline prepared by solid-state reaction methods. The corresponding ZT values of Mg2Si0.35Sn0.65 single crystal are greatly improved. It indicates that, the Mg2Si1−xSnx crystals prepared by HGDS can not only have a uniform microstructure, but also optimize the TE performance of the crystal. In addition, the first-principles calculation has been conducted to examine the intrinsic properties of Mg2Si1−xSnx single crystals, and the calculated data agree well with the experimental results.