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Published in:
2018 | OriginalPaper | Chapter
14. Microwave Transistors
Authors : Andrey D. Grigoriev, Vyacheslav A. Ivanov, Sergey I. Molokovsky (deceased)
Published in: Microwave Electronics
Publisher: Springer International Publishing
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Abstract
Features of disigning field and bipolar transistors in the microwave range are considered. The main attention is paid to a field effect transistor with a Schottky barrier control on gallium arsenide. Equivalent schemes, physical-topological models and temperature models are presented. Features of functioning, parameters and characteristics are discussed. The noise model is analized.