Advertisement
Published in:
2007 | OriginalPaper | Chapter
Modeling Study of Ultra-Thin Ge Layers Using Tight-Binding, LCBB and kp Methods
Authors : D. Rideau, E. Batail, S. Monfray, C. Tavernier, H. Jaouen
Published in: Simulation of Semiconductor Processes and Devices 2007
Publisher: Springer Vienna
Activate our intelligent search to find suitable subject content or patents.
Select sections of text to find matching patents with Artificial Intelligence. powered by
Select sections of text to find additional relevant content using AI-assisted search. powered by
The confined states in ultra-thin Ge layers on oxide are investigated using three different state-of-the-art full-band methods. Contrary to the prediction of the simple effective mass approximation (EMA) and multiband-models that decoupled the Conduction Bands (CB) and the Valence Bands (VB), full-band calculations predicts much lower subband energy shifts due to quantum confinement.