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Journal of Materials Science: Materials in Electronics

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25-02-2017

MOVPE growth of InAsBi/InAs/GaAs heterostructure analyzed by in situ spectral reflectance

Authors: R. Boussaha, H. Fitouri, A. Rebey, B. El Jani

Published in: Journal of Materials Science: Materials in Electronics | Issue 12/2017

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Abstract

InAsBi/InAs heterostructures were elaborated on semi-insulating GaAs substrate by atmospheric pressure metalorganic vapor phase epitaxy. Spectral reflectance in the range of 400–800 nm was employed to in situ monitor epitaxy. In order to determine optical constants of InAsBi films, an optical model incorporating two parameters: time-dependent surface roughness and time-dependent growth rate was established to simulate the in situ reflectance. Since bismuth has a crucial effect on surface kinetic mechanisms during growth of III–V semiconductors, a theoretical motivation introducing these two parameters instead of a standard single rms roughness and growth rate was provided. In order to evaluate the structural and optical properties of this material, reflectivity responses were analyzed for several wavelengths. Results were ex situ correlated with atomic force microscopy measurements.

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K.Y. Ma, Z.M. Fang, R.M. Cohen, G.B. Stringfellow, Ultra-low temperature OMVPE of InAs and InAsBi, J. Electron. Mater. 21, 143 (1992)CrossRef

P.T. Webster, A.J. Shalindar, N.A. Riordan, C. Gogineni, H. Liang, A.R. Sharma, S.R. Johnson, Optical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III–V semiconductor superlattices. J. Appl. Phys. 119, 225701 (2016)CrossRef

P. Verma, K. Oe, M. Yamada, H. Harima, M. Herms, G. Irmer, Raman studies on GaAs_1–xBi_xGaAs_1–xBi_x and InAs_1–xBi_x. J. Appl. Phys. 89, 1657 (2001)CrossRef

I.C. Sandall, F. Bastiman, B. White, R. Richards, D. Mendes, J.P.R. David, C.H. Tan, Demonstration of InAsBi photoresponse beyond 3.5 μm. J. Appl. Phys. Lett. 104, 171109 (2014)CrossRef

I.P. Marko, P. Ludewig, Z.L. Bushell, S.R. Jin, K. Hild, Z. Batool et al., Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi. J. Phys D: Appl Phys. 47, 345103 (2014)CrossRef

J. Lu, P.T. Webster, S. Liu, Y.H. Zhang, S.R. Johnson, D.J. Smith, Investigation of MBE-grown InAs1–xBix alloys and Bi-mediated type-II superlattices by transmission electron microscopy. J. Cryst. Growth 425, 250 (2015)CrossRef

J. Lu, X.-H. Zhao, D.J. Smith, Y.-H. Zhang, S.R. Johnson, Molecular beam epitaxy using bismuth as a constituent in InAs and a surfactant in InAs/InAsSb superlattices, J. Vac. Sci. Technol. B 32, 02C120 (2014)CrossRef

K.T. Huang, C.T. Chiu, R.M. Cohen, G.B. Stringfellow, InAsBi alloys grown by organometallic vapor phase epitaxy. J. Cryst. Growth 134, 29 (1993)CrossRef

R. Boussaha, H. Fitouri, A. Rebey, B. El Jani, Effect of growth temperature and GaAs substrate misorientation on the morphology of InAsBi nanoislands grown by metalorganic vapor phase epitaxy. Appl. Surf. Sci. 291, 40 (2014)CrossRef

10.

H. Fitouri, I. Moussa, A. Rebey, A. Fouzri, B. El Jani, AP-MOVPE of thin GaAs_1–xBi_x alloys. J. Cryst. Growth 295, 114 (2006)CrossRef

11.

L. Dominguez, D.F. Reyes, F. Bastiman, D. L. Sales, R.D. Richards, D. Mendes, J.P.R. David, D. Gonzalez, Formation of tetragonal InBi clusters in InAsBi/InAs(100) heterostructures grown by molecular beam epitaxy. Appl. Phys. Express 6, 112601 (2013)CrossRef

12.

D.P Samajdar, S. Dhar, Influence of Bi-related impurity states on the bandgap and spin–orbit splitting energy of dilute III–V-Bi alloys: InP_1–xBi_x, InAs_1–x Bi_x, InSb_1–x Bi_x and GaSb_1–xBi_x. Superlattices Microstruct. 89, 112 (2016)CrossRef

13.

G. Vardar, S.W. Paleg, M.V. Warren, M. Kang, R.S. Goldman, Mechanisms of droplet formation and Bi incorporation during molecular beam epitaxy of GaAsBi. Appl. Phys. Lett. 102, 042106 (2013)CrossRef

14.

S.P. Svensson, H. Hier, W.L. Sarney, D. Donetsky, D. Wang, G. Belenky, Molecular beam epitaxy control and photoluminescence properties of InAsBi. J. Vac. Sci. Technol. B. 30, 02B109 (2012)CrossRef

15.

K.Y. Ma, Z.M. Fang, R.M. Cohen, G.B. Stringfellow, Organometallic vapor phase epitaxy growth and characterization of Bi containing III/V alloys. J. Appl. Phys. 68, 4586 (1990)CrossRef

16.

M.M. Habchi, A. Rebey, A. Fouzri, B. El Jani, Laser reflectometry in situ monitoring of InGaAs grown by atmospheric pressure metalorganic vapour phase epitaxy. Appl. Surf. Sci. 253, 275 (2006)CrossRef

17.

R.R. Wixom, L.W. Rieth, G.B. Stringfellow, Sb and Bi surfactant effects on homo-epitaxy of GaAs on (001) patterned substrates. J. Cryst. Growth 265, 367 (2004)CrossRef

18.

I. Zaied, H. Fitouri, Z. Chine, A. Rebey, B. El Jani, Atmospheric-pressure metal-organic vapor-phase epitaxy of GaAsBi alloys on high-index GaAs substrates. J. Phys. Chem. Solids 75, 244 (2014)CrossRef

19.

W.G. Breiland, K.P. Killeen, A virtual interface method for extracting growth rates and high temperature optical constants from thin semiconductor films using in situ normal incidence reflectance. J. Appl. Phys. 78, 6726 (1995)CrossRef

20.

P.S. Hauge, Polycrystalline silicon film thickness measurement from analysis of visible reflectance spectra. J. Opt. Soc. Am. 69, 1143 (1979)CrossRef

21.

I. Massoudi, M.M. Habchi, A. Rebey, B. El Jani, Study of surface roughness using spectral reflectance measurements recorded during the MOVPE of InAs/GaAs heterostructures. Physica. E44, 1282 (2012)CrossRef

22.

I. Massoudi, M.M. Habchi, A. Rebey, B. El Jani, Optical and morphological study of misoriented GaAs substrates exposed to bismuth flow using in situ spectral reflectance and atomic force microscopy. J. Cryst. Growth 353, 77 (2012)CrossRef

23.

H. Fitouri, R. Boussaha, A. Rebey, B. El Jani, Oxidation of bismuth nanodroplets deposit on GaAs substrate, Appl. Phys. A. 112, 701 (2013)CrossRef

24.

D.E. Aspnes, A.A. Studna, Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV. Phys. Rev B. 27, 985 (1983)CrossRef

25.

C. Liu, I.M. Watson, Quantitative simulation of in situ reflectance data from metal organic vapour phase epitaxy of GaN on sapphire. Semicond. Sci. Technol. 22, 629 (2007)CrossRef

26.

Z.L. Miao, S.J. Chua, S. Tripathy, C.K. Chia, Y.H. Chye, P. Chen, High-quality InAs grown on GaAs substrate with an in situ micro-structured buffer. J. Cryst. Growth 268, 18 (2004)CrossRef

27.

K.Y. Ma, Z.M. Fang, R.M. Cohen, G.B. Stringfellow, Investigation of organometallic vapor phase epitaxy of InAs and InAsBi at temperatures as low as 275 °C. J. Appl. Phys. 70, 3940 (1991)CrossRef

28.

I. Moussa, H. Fitouri, A. Rebey, B. El Jani, Atmospheric-pressure metalorganic vapour phase epitaxy optimization of GaAsBi alloy. Thin Solid Films 516, 8372 (2008)CrossRef

29.

A.J. Ptak, R. France, D.A. Beaton, K. Alberi, J. Simon, A. Mascarenhas, C.S. Jiang, Kinetically limited growth of GaAsBi by molecular-beam epitaxy. J. Cryst. Growth 338, 107 (2012)CrossRef

30.

C.D. Zuiker, D.M. Gruen, A.R. Krauss, In situ laser reflectance interferometry measurement of diamond film growth. J. Appl. Phys. 79, 3541 (1996)CrossRef

31.

C.D. Zuiker, D.M. Gruen, A.R. Krauss, Laser-reflectance interferometry measurement of diamond-film growth, MRS Bull. 20, 29 (1995)CrossRef

32.

D. Franta, I. Ohlidal, Comparison of effective medium approximation and Rayleigh–Rice theory concerning ellipsometric characterization of rough surfaces. Opt. Commun. 248, 459 (2005)CrossRef

33.

I. Massoudi, M.M. Habchi, A. Rebey, B. El Jani, In situ spectral reflectance investigation of InAs/GaAs heterostructures grown by MOVPE. J. Electron. Mater. 41, 498 (2012)CrossRef

Title: MOVPE growth of InAsBi/InAs/GaAs heterostructure analyzed by in situ spectral reflectance
Authors: R. Boussaha
H. Fitouri
A. Rebey
B. El Jani
Publication date: 25-02-2017
Publisher: Springer US
Published in: Journal of Materials Science: Materials in Electronics / Issue 12/2017
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-017-6595-1

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