Skip to main content
Top
Published in: Semiconductors 11/2018

01-11-2018 | XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018

Multiphonon Intracenter Relaxation of Boron Acceptor States in Diamond

Author: N. A. Bekin

Published in: Semiconductors | Issue 11/2018

Log in

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

The relaxation rates are calculated in the adiabatic approximation, in which the steady-state impurity states are taken to be electronic-vibrational (vibronic) states. The probabilities of transitions between these states with the emission (or absorption) of one or several phonons are calculated in first-order perturbation theory on the assumption that the transitions are a result of the violation of adiabaticity. The electron part of the wave function of the vibronic state is described by a simple Hamiltonian with an isotropic effective mass. The wave function of the ground state is determined by the quantum defect method. According to the calculations, a hole relaxes from the excited boron acceptor state, whose energy is 304 meV higher than the energy of the ground state, to the ground state with the emission of two optical phonons with a rate of ~1011 s–1. This value is an estimate from above, since the model of nondispersive optical phonons used in the study overestimates the number of phonon modes, whose participation in relaxation is allowed by the energy conservation law. However, despite the rough approximation, it can be concluded that the multiphonon relaxation of boron acceptor states in diamond is a fast process.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Literature
4.
go back to reference Semiconducrors—Basic Data, 2nd ed., Ed. by O. Madelung (Springer, Berlin, 1996). Semiconducrors—Basic Data, 2nd ed., Ed. by O. Madelung (Springer, Berlin, 1996).
6.
go back to reference A. T. Collins, P. J. Dean, E. C. Lightowlers, and W. F. Sherman, Phys. Rev. 140, A1272 (1965).ADSCrossRef A. T. Collins, P. J. Dean, E. C. Lightowlers, and W. F. Sherman, Phys. Rev. 140, A1272 (1965).ADSCrossRef
8.
go back to reference A. M. Stoneham, Theory of Defects in Solids: Electronic Structure of Defects in Insulators and Semiconductors (Clarendon Press, Oxford, 1975). A. M. Stoneham, Theory of Defects in Solids: Electronic Structure of Defects in Insulators and Semiconductors (Clarendon Press, Oxford, 1975).
11.
go back to reference L. Reggiani, S. Bosi, C. Canali, F. Nava, and S. F. Kozlov, Phys. Rev. B 23, 3050 (1981).ADSCrossRef L. Reggiani, S. Bosi, C. Canali, F. Nava, and S. F. Kozlov, Phys. Rev. B 23, 3050 (1981).ADSCrossRef
12.
go back to reference K. J. Morse, R. J. S. Abraham, A. DeAbreu, C. Bowness, T. S. Richards, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, M. L. W. Thewalt, and S. Simmons, Sci. Adv. 3, e1700930 (2017).ADSCrossRef K. J. Morse, R. J. S. Abraham, A. DeAbreu, C. Bowness, T. S. Richards, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, M. L. W. Thewalt, and S. Simmons, Sci. Adv. 3, e1700930 (2017).ADSCrossRef
13.
go back to reference A. Dargys and J. Kundrotas, Handbook on Physical Properties of Ge, Si, GaAs and InP (Vilnius, 1994). A. Dargys and J. Kundrotas, Handbook on Physical Properties of Ge, Si, GaAs and InP (Vilnius, 1994).
Metadata
Title
Multiphonon Intracenter Relaxation of Boron Acceptor States in Diamond
Author
N. A. Bekin
Publication date
01-11-2018
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 11/2018
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782618110040

Other articles of this Issue 11/2018

Semiconductors 11/2018 Go to the issue

XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018

Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface

XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018

Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates

XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018

Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg1 –xCdxTe Layers

XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018

Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates

XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018

Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics

Premium Partner