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Published in: Semiconductors 11/2018

01-11-2018 | XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018

Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates

Published in: Semiconductors | Issue 11/2018

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Abstract

Hybrid laser structures with AlGaInAs quantum wells are grown by metalorganic vapor phase epitaxy on Ge/Si(100) “virtual” substrates using GaAs and InP buffer layers. Stimulated emission is achieved under optical pumping of the prepared samples in the range of 1.3–1.5 μm at liquid-nitrogen temperature. The stimulated-emission threshold is 30–70 kW/cm2.

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Metadata
Title
Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates
Publication date
01-11-2018
Published in
Semiconductors / Issue 11/2018
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782618110143

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