Top

Journal of Materials Science

Published in:

07-03-2017 | Original Paper

n- and p-type dopants in the InSe monolayer via substitutional doping

Authors: Xueping Li, Congxin Xia, Xiaohui Song, Juan Du, Wenqi Xiong

Published in: Journal of Materials Science | Issue 12/2017

Activate our intelligent search to find suitable subject content or patents.

search-config

AI-assisted search

Off

Abstract

On the basis of density functional theory, we investigate the characteristics of n- and p-type dopants in the InSe monolayer by group V and VII atoms substituting Se atom. The results show that group V and VII atoms substituting Se atom have significant influences on the electronic structures of the InSe monolayer, and all the considered doping cases can be easier to be realized under In-rich experiment conditions. For group V atom-doped InSe monolayer, the magnetic ground states are obtained and its transition levels are too large to provide effective p-type carrier. In contrast, for group VII atom, I atom substituting Se atom has lower formation energy and shallowest transition level, which indicates that I substituting Se atom can induce effective n-type doping in the InSe nanosheets.

previous article Toughness evolution in Gd- and Y-stabilized zirconia thermal barrier materials upon high-temperature exposure

next article Controlled synthesis and mechanism of large-area WS2 flakes by low-pressure chemical vapor deposition

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

über 102.000 Bücher
über 537 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Finance + Banking
Management + Führung
Marketing + Vertrieb
Maschinenbau + Werkstoffe
Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

über 67.000 Bücher
über 390 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Maschinenbau + Werkstoffe

Jetzt Wissensvorsprung sichern!

inform now

Novoselov K, Geim A, Morozo S, Jiang D, Zhang Y, Dubonos S, Grigorieva I, Firsov A (2004) Electric field effect in atomically thin carbon films. Science 306:666–669CrossRef

Novoselov K, Geim A, Morozov S, Jiang D, Katsnelson M, Grigorieva I, Dubonos S, Firsov A (2005) Two-dimensional gas of massless Dirac fermions in graphene. Nature 438:197–200CrossRef

Hu P, Wang L, Yoon M, Zhang J, Feng W, Wang X, Wen Z, Idrobo J, Miyamoto Y, Geohegan D, Xiao K (2013) Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates. Nano Lett 13:1649–1654CrossRef

Tongay S, Zhou J, Ataca C, Lo K, Matthews T, Li J, Grossman J, Wu J (2012) Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe₂ versus MoS₂. Nano Lett 12:5576–5580CrossRef

Wang Q, Zadeh K, Kis A, Coleman J, Strano M (2012) Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat Nanotechnol 7:699–712CrossRef

Lee Y, Zhang X, Zhang W, Chang M, Lin C, Chang K, Yu Y, Wang J, Chang C, Li L, Lin T (2012) Synthesis of large-area MoS₂ atomic layers with chemical vapor deposition. Adv Mater 24:2320–2325CrossRef

Kang J, Tongay S, Zhou J, Li J, Wu J (2013) Band offsets and heterostructures of two-dimensional semiconductors. Appl Phys Lett 102:012111CrossRef

Keyshar K, Gong Y, Ye G, Brunetto G, Zhou W, Cole D, Hackenberg K, He Y, Machado L, Kabbani M, Hart A, Li B, Galvao D, George A, Vajtai R, Tiwary C, Ajayan P (2015) Chemical vapor deposition of monolayer Rhenium Disulfide (ReS₂). Adv Mater 27:4640–4648CrossRef

Golberg D, Bando Y, Huang Y, Terao T, Mitome M, Tang C, Zhi C (2010) Boron Nitride nanotubes and nanosheets. ACS Nano 4:2979–2993CrossRef

10.

Dean C, Young A, Meric I, Lee C, Wang L, Sorgenfrei S, Watanabe K, Taniguchi T, Kim P, Shepardand K, Hone J (2010) Boron Nitride substrates for high-quality graphene electronics. Nat Nanotechnol 5:722–726CrossRef

11.

Balakrishnan N, Kudrynskyi Z, Fay M, Mudd G, Svatek S, Makarovsky O, Kovalyuk Z, Eaves L, Beton P, Patane A (2014) Room temperature electroluminescence from mechanically formed van der Waals III–VI homojunctions and heterojunctions. Adv Opt Mater 2:1064–1069CrossRef

12.

Wu X, Dai X, Yu H, Fan H, Hu J, Yao W (2014) Magnetisms in p-type monolayer gallium chalcogenides (GaSe, GaS). arXiv:1409.4733

13.

Cao T, Li Z, Louie S (2015) Tunable magnetism and half-metallicity in hole-doped monolayer GaSe. Phys Rev Lett 114:236602CrossRef

14.

Mudd G, Svatek S, Hague L, Makarovsky O, Kudrynskyi Z, Mellor C, Beton P, Eaves L, Novoselov K, Kovalyuk Z, Vdovin E, Marsden A, Wilson N, Patanè A (2015) High broad-band photoresponsivity of mechanically formed InSe–Graphene van der Waals heterostructures. Adv Mater 27:3760–3766CrossRef

15.

Feng W, Guo GY, Yao Y (2016) Tunable magneto-optical effects in hole-doped group-IIIA metal-monochalcogenide monolayers. 2D Mater 4:015017CrossRef

16.

Politano A, Chiarello G, Samnakay R, Liu G, Gürbulak B, Duman S, Balandinc A, Boukhvalovf D (2016) The influence of chemical reactivity of surface defects on ambient-stable InSe-based nanodevices. Nanoscale 8:8474–8479CrossRef

17.

Brotons-Gisbert M, Andres-Penare D, Suh J, Hidalgo F, Abargues R, Rodríguez-Cantó P, Segura A, Cros A, Tobias G, Canadell E, Ordejón P, Wu J, Martínez-Pastor J, Sánchez-Royo J (2016) Nanotexturing to enhance photoluminescent response of atomically thin Indium Selenide with highly tunable band gap. Nano Lett 16:3221–3229CrossRef

18.

Velichko A, Kudrynskyi Z, Di Paola D, Makarovsky O, Kesaria M, Krier A, Sandall I, Tan C, Kovalyuk Z, Patanè A (2016) Highly-mismatched InAs/InSe heterojunction diodes. Appl Phys Lett 109:182115CrossRef

19.

Bandurin DA, Tyurnina AV, Geliang LY, Mishchenko A, Zólyomi V, Morozov SV, Kumar R, Gorbachev RV, Kudrynskyi ZR, Pezzini S, Kovalyuk ZD, Zeitler U, Novoselov KS, Patanè A, Eaves L, Grigorieva IV, Fal’ko VI, Geim AK, Cao Y (2016) High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe. Nat Nanotechnol. doi:10.1038/nnano.2016.242

20.

Camassel J, Merle P, Mathieu H, Chevy A (1978) Excitonic absorption edge of indium selenide. Phys Rev B 17:4718–4725CrossRef

21.

Zolyomi V, Drummond N, Fal’ko V (2014) Electrons and phonons in single layers of hexagonal indium chalcogenides from ab initio calculations. Phys Rev B 89:205416CrossRef

22.

Rybkovskiy D, Osadchy A, Obraztsova E (2014) Transition from parabolic to ring-shaped valence band maximum in few-layer GaS, GaSe, and InSe. Phys Rev B 90:235302CrossRef

23.

Mudd G, Svatek S, Ren T, Patane A, Makarovsky O, Eaves L, Beton P, Kovalyuk Z, Lashkarev G, Kudrynskyi Z, Dmitriev A (2013) Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement. Adv Mater 25:5714–5718CrossRef

24.

Sun C, Xiang H, Xu B, Xia Y, Yin J, Liu Z (2016) Ab initio study of carrier mobility of few-layer InSe. Appl Phys Express 9:035203CrossRef

25.

Lei S, Ge L, Najmaei S, George A, Kappera R, Lou J, Chhowalla M, Yamaguchi H, Gupta G, Vajtai R, Mohite A, Ajayan P (2014) Evolution of the electronic band structure and efficient photo-detection in atomic layers of InSe. ACS Nano 8:1263–1272CrossRef

26.

Tamalampudi S, Lu Y, Kumar U, Sankar R, Liao C, Moorthy B, Cheng C, Chou F, Chen Y (2014) High performance and bendable few-layered InSe photodetectors with broad spectral response. Nano Lett 14:2800–2806CrossRef

27.

Lin M, Wu D, Zhou Y, Huang W, Jiang W, Zheng W, Zhao S, Jin C, Guo Y, Peng H, Liu Z (2013) Controlled growth of atomically thin In₂Se₃ flakes by van der Waals epitaxy. J Am Chem Soc 135:13274–13277CrossRef

28.

Feng W, Zheng W, Cao W, Hu P (2014) Back gated multilayer InSe transistors with enhanced carrier mobilities via the suppression of carrier scattering from a dielectric interface. Adv Mater 26:6587–6593CrossRef

29.

Sucharitakul S, Goble N, Kumar U, Sankar R, Bogorad Z, Chou F, Chen Y, Gao X (2015) Intrinsic electron mobility exceeding 10³ cm²/(V s) in multilayer InSe FETs. Nano Lett 15:3815–3819CrossRef

30.

Blöchl P (1994) Projector augmented-wave method. Phys Rev B 50:17953–17979CrossRef

31.

Kresse G, Hafner J (1994) Ab initio molecular-dynamics simulation of the liquid-metal-amorphous-semiconductor transition in germanium. Phys Rev B 49:14251–14269CrossRef

32.

Kresse G, Furthmüller J (1996) Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys Rev B 54:11169–11186CrossRef

33.

Perdew J, Burke K, Ernzerhof M (1996) Generalized gradient approximation made simple. Phys Rev Lett 77:3865–3868CrossRef

34.

Monkhorst H, Pack J (1976) Special points for Brillouin-zone integrations. Phys Rev B 13:5188–5192CrossRef

35.

Van de Walle C, Neugebauer J (2004) First-principles calculations for defects and impurities: applications to III-nitrides. J Appl Phys 95:3851–3879CrossRef

36.

Kuroda N, Nishina Y (1980) Resonance Raman scattering study on exciton and polaron anisotropies in InSe. Solid State Commun 34:481–484CrossRef

Title: n- and p-type dopants in the InSe monolayer via substitutional doping
Authors: Xueping Li
Congxin Xia
Xiaohui Song
Juan Du
Wenqi Xiong
Publication date: 07-03-2017
Publisher: Springer US
Published in: Journal of Materials Science / Issue 12/2017
Print ISSN: 0022-2461
Electronic ISSN: 1573-4803
DOI: https://doi.org/10.1007/s10853-017-0957-1

Springer Professional

Abstract

Please log in to get access to your license.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Springer Professional "Technik"

Other articles of this Issue 12/2017

A facile way to produce epoxy nanocomposites having excellent thermal conductivity with low contents of reduced graphene oxide

Thermodynamics and kinetics of MgH2–nfTa2O5 composite for reversible hydrogen storage application

Mössbauer and TEM studies of the phase composition and structure of (Nd1−x Ce x )32.7Fe66.22B1.08 ribbons

Influence of cerium dopant on magnetic and dielectric properties of ZnO nanoparticles

Facile synthesis and characterization of TiO2–graphene–ZnFe2−x Tb x O4 ternary nano-hybrids

Effect of La/Cr codoping on structural transformation, leakage, dielectric and magnetic properties of BiFeO3 ceramics

Premium Partners