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Published in: Journal of Materials Science 12/2017

08-03-2017 | Original Paper

Controlled synthesis and mechanism of large-area WS2 flakes by low-pressure chemical vapor deposition

Authors: Song Hu, Xiangfu Wang, Lan Meng, Xiaohong Yan

Published in: Journal of Materials Science | Issue 12/2017

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Abstract

WS2 flakes have been grown successfully on SiO2(300 nm)/Si substrate via traditional low-pressure chemical vapor deposition method. We studied the controllable growth of WS2 flakes on three of the growth parameters: the time of S-precursor introduction, the temperature of WO3 precursor and the growth temperature. The as-prepared products were characterized by X-ray photoemission spectroscopy, Raman spectra and atomic force microscopy. It is found that the morphologies of WS2 flakes and the products are highly dependent on the concentration of S-precursor, W-precursor and the ratio of W atoms to S atoms, while large-area WS2 flakes up to 160 μm can be obtained. If the ratio of W/S is ≤1:2, we obtain triangular and hexagonal WS2 flakes. On the contrary, if the ratio of W/S is >1:2, besides WS2 flakes, W nanowires will be formed owing to the superfluous W atoms. This study can provide an important and practical guide to preparing large-area and high-quality two-dimensional transition metal dichalcogenides materials.

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Metadata
Title
Controlled synthesis and mechanism of large-area WS2 flakes by low-pressure chemical vapor deposition
Authors
Song Hu
Xiangfu Wang
Lan Meng
Xiaohong Yan
Publication date
08-03-2017
Publisher
Springer US
Published in
Journal of Materials Science / Issue 12/2017
Print ISSN: 0022-2461
Electronic ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-017-0958-0

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