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Journal of Materials Science

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01-05-2015 | Original Paper

Nonequivalent-F-induced relaxations in LaF₃ single crystals over a broad temperature range

Authors: Jing Wang, Chunchang Wang, Xiaohong Sun, Jian Zhang, Jun Zheng, Chao Cheng, Hong Wang, Yide Li, Shouguo Huang

Published in: Journal of Materials Science | Issue 10/2015

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Abstract

The dielectric properties of LaF₃ single crystals were investigated in the temperature range from 110 to 773 K and the frequency range from 100 Hz to 10 MHz. Two thermally activated relaxations (R1 and R2) and a dielectric anomaly (A) were observed. The lower temperature relaxation (R1) was ascribed to a polaronic relaxations due to fluorine ions diffusion within the F₁ sublattice and fluorine ions hopping in F₁ sublattice. The higher temperature relaxation (R2) is Maxwell–Wagner relaxation due to the blocking of electrodes associated with the ionic exchange between F₁ and F_2,3 sublattices and among the three nonequivalent sublattices. The anomaly appearing in the highest temperature range is related to the inductive effect arising from the coupled electron-ionic inductive response.

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Title: Nonequivalent-F-induced relaxations in LaF3 single crystals over a broad temperature range
Authors: Jing Wang
Chunchang Wang
Xiaohong Sun
Jian Zhang
Jun Zheng
Chao Cheng
Hong Wang
Yide Li
Shouguo Huang
Publication date: 01-05-2015
Publisher: Springer US
Published in: Journal of Materials Science / Issue 10/2015
Print ISSN: 0022-2461
Electronic ISSN: 1573-4803
DOI: https://doi.org/10.1007/s10853-015-8944-x

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