Skip to main content
Top
Published in: Journal of Computational Electronics 4/2016

18-10-2016

Numerical modeling of thermal behavior and structural optimization of a-Si:H solar cells at high temperatures

Authors: Jabbar Ganji, Abdolnabi Kosarian, Hooman Kaabi

Published in: Journal of Computational Electronics | Issue 4/2016

Log in

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

A large amount of solar energy is collected in tropical zones of the earth, where the temperature of photo-voltaic (PV) modules can exceed to more than \(70\,^{\circ }\text {C}\). At such high temperatures, the performance of most solar cells is greatly degraded, since the performance parameters of the cells are mainly decreasing functions of temperature. Despite the high importance of solar energy conversion in hot places, little attention has been paid to the investigation of high-temperature effects on the conversion efficiency of the cells. In this paper, the performance of a wide selection of solar cells of different structures made from different materials is analyzed at high temperatures in the range of 50–75 \(^{\circ }\text {C}\), which is different from the standard test condition usually used in the assessment of solar cells. An accurate model for thermal behavior of the cell is suggested, in which almost all important parameters affecting each layer on the cell’s thermal behavior are included, such as mobility, thermal velocity of carriers, bandgap, Urbach energy of band tails, electron affinity, relative permittivity, and effective density of states in the valence and conduction bands. The effects of possible arrangements of different layers and their materials and structural parameters, as well as light-induced defects and sunlight intensity, are also studied in the analysis. A relation is proposed between the optimal thickness of the absorber layer and the working temperature. Finally, an optimal structure of the solar cell at high temperatures is suggested.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

Literature
1.
go back to reference Green, M.A.: Crystalline and thin-film silicon solar cells: state of the art and future potential. Sol. Energy 74(3), 181–192 (2003)CrossRef Green, M.A.: Crystalline and thin-film silicon solar cells: state of the art and future potential. Sol. Energy 74(3), 181–192 (2003)CrossRef
2.
go back to reference Bougoffa, A., Trabelsi, A., Zouari, A., Dhahri, E.: Analysis of external quantum efficiency and conversion efficiency of thin crystalline silicon solar cells with textured front surface. J. Comput. Electron. 1–10 (2016) Bougoffa, A., Trabelsi, A., Zouari, A., Dhahri, E.: Analysis of external quantum efficiency and conversion efficiency of thin crystalline silicon solar cells with textured front surface. J. Comput. Electron. 1–10 (2016)
3.
go back to reference Sriprapha, K., Yunaz, I.A., Hiza, S., Ahn, K.H., Myong, S.Y., Yamada, A., Konagai, M.: Temperature dependence of silicon-based thin film solar cells on their intrinsic absorber. MRS Proc. 989, 0989–A24–02 (6 pages) (2007) Sriprapha, K., Yunaz, I.A., Hiza, S., Ahn, K.H., Myong, S.Y., Yamada, A., Konagai, M.: Temperature dependence of silicon-based thin film solar cells on their intrinsic absorber. MRS Proc. 989, 0989–A24–02 (6 pages) (2007)
4.
go back to reference Riesen, Y., Stuckelberger, M., Haug, F.J., Ballif, C., Wyrsch, N.: Temperature dependence of hydrogenated amorphous silicon solar cell performances. J. Appl. Phys. 119(4), 44–505 (2016)CrossRef Riesen, Y., Stuckelberger, M., Haug, F.J., Ballif, C., Wyrsch, N.: Temperature dependence of hydrogenated amorphous silicon solar cell performances. J. Appl. Phys. 119(4), 44–505 (2016)CrossRef
5.
go back to reference Kondo, M., Nishio, H., Kurata, S., Hayashi, K., Takenaka, A., Ishikawa, A., Nishimura, K., Yamagishi, H., Tawada, Y.: Effective conversion efficiency enhancement of amorphous silicon modules by operation temperature elevation. Sol. Energy Mater. Sol. Cells 49(14), 1–6 (1997)CrossRef Kondo, M., Nishio, H., Kurata, S., Hayashi, K., Takenaka, A., Ishikawa, A., Nishimura, K., Yamagishi, H., Tawada, Y.: Effective conversion efficiency enhancement of amorphous silicon modules by operation temperature elevation. Sol. Energy Mater. Sol. Cells 49(14), 1–6 (1997)CrossRef
6.
go back to reference Akhmad, K., Kitamura, A., Yamamoto, F., Okamoto, H., Takakura, H., Hamakawa, Y.: Outdoor performance of amorphous silicon and polycrystalline silicon PV modules. Sol. Energy Mater. Sol. Cells 46(3), 209–218 (1997)CrossRef Akhmad, K., Kitamura, A., Yamamoto, F., Okamoto, H., Takakura, H., Hamakawa, Y.: Outdoor performance of amorphous silicon and polycrystalline silicon PV modules. Sol. Energy Mater. Sol. Cells 46(3), 209–218 (1997)CrossRef
7.
go back to reference Fukae, K., Chin Chou, L., Tamechika, M., Takehara, N., Saito, K., Kajita, I., Kondo, E.: Outdoor performance of triple stacked a-Si photovoltaic module in various geographical locations and climates. In: IEEE Conference Record of the Twenty Fifth Photovoltaic Specialists Conference, pp. 1227–1230 (1996) Fukae, K., Chin Chou, L., Tamechika, M., Takehara, N., Saito, K., Kajita, I., Kondo, E.: Outdoor performance of triple stacked a-Si photovoltaic module in various geographical locations and climates. In: IEEE Conference Record of the Twenty Fifth Photovoltaic Specialists Conference, pp. 1227–1230 (1996)
8.
go back to reference Virtuani, A., Strepparava, D., Friesen, G.: A simple approach to model the performance of photovoltaic solar modules in operation. Sol. Energy 120, 439–449 (2015)CrossRef Virtuani, A., Strepparava, D., Friesen, G.: A simple approach to model the performance of photovoltaic solar modules in operation. Sol. Energy 120, 439–449 (2015)CrossRef
9.
go back to reference Shima, M., Isomura, M., Wakisaka, K.I., Murata, K., Tanaka, M.: The influence of operation temperature on the output properties of amorphous silicon-related solar cells. Sol. Energy Mater. Sol. Cells 85(2), 167–175 (2005)CrossRef Shima, M., Isomura, M., Wakisaka, K.I., Murata, K., Tanaka, M.: The influence of operation temperature on the output properties of amorphous silicon-related solar cells. Sol. Energy Mater. Sol. Cells 85(2), 167–175 (2005)CrossRef
10.
go back to reference Kameda, M., Sakai, S., Isomura, M., Sayama, K., Hishikawa, Y., Matsumi, S., Haku, H., Wakisaka, K., Tanaka, M., Kiyama, S., Tsuda, S., Nakano, S.: Efficiency evaluation of a-Si and c-Si solar cells for outdoor use. In: IEEE Conference Record of the Twenty Fifth Photovoltaic Specialists Conference, pp. 1049–1052 (1996) Kameda, M., Sakai, S., Isomura, M., Sayama, K., Hishikawa, Y., Matsumi, S., Haku, H., Wakisaka, K., Tanaka, M., Kiyama, S., Tsuda, S., Nakano, S.: Efficiency evaluation of a-Si and c-Si solar cells for outdoor use. In: IEEE Conference Record of the Twenty Fifth Photovoltaic Specialists Conference, pp. 1049–1052 (1996)
11.
go back to reference Varache, R., Leendertz, C., Gueunier-Farret, M.E., Haschke, J., Muñoz, D., Korte, L.: Investigation of selective junctions using a newly developed tunnel current model for solar cell applications. Sol. Energy Mater. Sol. Cells 141, 14–23 (2015)CrossRef Varache, R., Leendertz, C., Gueunier-Farret, M.E., Haschke, J., Muñoz, D., Korte, L.: Investigation of selective junctions using a newly developed tunnel current model for solar cell applications. Sol. Energy Mater. Sol. Cells 141, 14–23 (2015)CrossRef
12.
go back to reference Altermatt, P.P.: Models for numerical device simulations of crystalline silicon solar cells-a review. J. Comput. Electron. 10(3), 314–330 (2011)CrossRef Altermatt, P.P.: Models for numerical device simulations of crystalline silicon solar cells-a review. J. Comput. Electron. 10(3), 314–330 (2011)CrossRef
13.
go back to reference Powell, M.J., Deane, S.C.: Improved defect-pool model for charged defects in amorphous silicon. Phys. Rev. B 48(15), 10815–10827 (1993)CrossRef Powell, M.J., Deane, S.C.: Improved defect-pool model for charged defects in amorphous silicon. Phys. Rev. B 48(15), 10815–10827 (1993)CrossRef
14.
go back to reference Kim, J.C., Schwartz, R.J.: Parameter estimation and modeling of hydrogenated amorphous silicon. ECE Technical Reports p. 89 (1996) Kim, J.C., Schwartz, R.J.: Parameter estimation and modeling of hydrogenated amorphous silicon. ECE Technical Reports p. 89 (1996)
15.
go back to reference Hata, N., Ganguly, G., Wagner, S., Matsuda, A.: Saturation of the defect density in hydrogenated amorphous silicon by pulsed light soaking. Appl. Phys. Lett. 61(15), 1817–1819 (1992)CrossRef Hata, N., Ganguly, G., Wagner, S., Matsuda, A.: Saturation of the defect density in hydrogenated amorphous silicon by pulsed light soaking. Appl. Phys. Lett. 61(15), 1817–1819 (1992)CrossRef
16.
go back to reference Wang, F., Schwarz, R.: Comprehensive numerical simulation of defect density and temperature-dependent transport properties in hydrogenated amorphous silicon. Phys. Rev. B 52(20), 14–586 (1995) Wang, F., Schwarz, R.: Comprehensive numerical simulation of defect density and temperature-dependent transport properties in hydrogenated amorphous silicon. Phys. Rev. B 52(20), 14–586 (1995)
17.
go back to reference Schiff, E.A.: Transport, interfaces, and modeling in amorphous silicon based solar cells. Subcontract report DOE NREL/SR-520-44101 (2008) Schiff, E.A.: Transport, interfaces, and modeling in amorphous silicon based solar cells. Subcontract report DOE NREL/SR-520-44101 (2008)
18.
go back to reference Schiff, E.A.: Carrier drift-mobilities and solar cell models for amorphous and nanocrystalline silicon. MRS Proc. 1153, 1153–A15–01 (12 pages) (2009) Schiff, E.A.: Carrier drift-mobilities and solar cell models for amorphous and nanocrystalline silicon. MRS Proc. 1153, 1153–A15–01 (12 pages) (2009)
19.
go back to reference Shah, A.V., Schade, H., Vanecek, M., Meier, J., Vallat-Sauvain, E., Wyrsch, N., Kroll, U., Droz, C., Bailat, J.: Thin-film silicon solar cell technology. Prog. Photovolt. 12(2–3), 113–142 (2004)CrossRef Shah, A.V., Schade, H., Vanecek, M., Meier, J., Vallat-Sauvain, E., Wyrsch, N., Kroll, U., Droz, C., Bailat, J.: Thin-film silicon solar cell technology. Prog. Photovolt. 12(2–3), 113–142 (2004)CrossRef
20.
go back to reference Sharma, D.K., Narasimhan, K.L., Periasamy, N., Bapat, D.R.: Temperature dependence of the electron drift mobility in doped and undoped amorphous silicon. Phys. Rev. B 44(23), 12806–12808 (1991)CrossRef Sharma, D.K., Narasimhan, K.L., Periasamy, N., Bapat, D.R.: Temperature dependence of the electron drift mobility in doped and undoped amorphous silicon. Phys. Rev. B 44(23), 12806–12808 (1991)CrossRef
21.
go back to reference Hossain, M.I., Bousselham, A., Alharbi, F.H.: Numerical analysis of the temperature effects on single junction solar cells efficiencies. In: IEEE 39th Photovoltaic Specialists Conference (PVSC), pp. 779–781 (2013) Hossain, M.I., Bousselham, A., Alharbi, F.H.: Numerical analysis of the temperature effects on single junction solar cells efficiencies. In: IEEE 39th Photovoltaic Specialists Conference (PVSC), pp. 779–781 (2013)
22.
go back to reference Aljishi, S., Cohen, J.D., Jin, S., Ley, L.: Band tails in hydrogenated amorphous silicon and silicon-germanium alloys. Phys. Rev. Lett. 64(23), 2811 (1990)CrossRef Aljishi, S., Cohen, J.D., Jin, S., Ley, L.: Band tails in hydrogenated amorphous silicon and silicon-germanium alloys. Phys. Rev. Lett. 64(23), 2811 (1990)CrossRef
23.
go back to reference Lechner, R.W.: Silicon nanocrystal films for electronic applications. Ph.D. thesis (2009) Lechner, R.W.: Silicon nanocrystal films for electronic applications. Ph.D. thesis (2009)
24.
go back to reference Kamiya, T., Suemasu, A., Watanabe, T., Sameshima, T., Shimizu, I.: Improvement of transport properties for polycrystalline silicon prepared by plasma-enhanced chemical vapor deposition. Appl. Phys. A 73(2), 151–159 (2001)CrossRef Kamiya, T., Suemasu, A., Watanabe, T., Sameshima, T., Shimizu, I.: Improvement of transport properties for polycrystalline silicon prepared by plasma-enhanced chemical vapor deposition. Appl. Phys. A 73(2), 151–159 (2001)CrossRef
25.
go back to reference Moradi, B.: Growth and characterization of polysilicon films deposited by reactive plasma beam epitaxy. Ph.D. thesis (1993) Moradi, B.: Growth and characterization of polysilicon films deposited by reactive plasma beam epitaxy. Ph.D. thesis (1993)
26.
go back to reference Scheller, L.P., Nickel, N.H.: Charge transport in polycrystalline silicon thin-films on glass substrates. J. Appl. Phys. 112(1), 13–713 (2012)CrossRef Scheller, L.P., Nickel, N.H.: Charge transport in polycrystalline silicon thin-films on glass substrates. J. Appl. Phys. 112(1), 13–713 (2012)CrossRef
27.
go back to reference Dinh, T., Dao, D.V., Phan, H.P., Wang, L., Qamar, A., Nguyen, N.T., Tanner, P., Rybachuk, M.: Charge transport and activation energy of amorphous silicon carbide thin film on quartz at elevated temperature. Appl. Phys. Express 8(6), 61–303 (2015)CrossRef Dinh, T., Dao, D.V., Phan, H.P., Wang, L., Qamar, A., Nguyen, N.T., Tanner, P., Rybachuk, M.: Charge transport and activation energy of amorphous silicon carbide thin film on quartz at elevated temperature. Appl. Phys. Express 8(6), 61–303 (2015)CrossRef
28.
go back to reference Dutta, R., Banerjee, P.K., Mitra, S.S.: Optical and electrical properties of hydrogenated amorphous silicon carbide. Phys. Status Solidi (b) 113(1), 277–284 (1982)CrossRef Dutta, R., Banerjee, P.K., Mitra, S.S.: Optical and electrical properties of hydrogenated amorphous silicon carbide. Phys. Status Solidi (b) 113(1), 277–284 (1982)CrossRef
29.
go back to reference Janz, S.: Amorphous silicon carbide for photovoltaic applications. Ph.D. thesis (2006) Janz, S.: Amorphous silicon carbide for photovoltaic applications. Ph.D. thesis (2006)
30.
go back to reference JUAN, H.A.N.L.: Structural and electrical characterisations of amorphous silicon carbide films. Ph.D. thesis (2005) JUAN, H.A.N.L.: Structural and electrical characterisations of amorphous silicon carbide films. Ph.D. thesis (2005)
31.
go back to reference Levinshtein, M.E., Rumyantsev, S.L., Shur, M.S.: Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe. Wiley, New York (2001) Levinshtein, M.E., Rumyantsev, S.L., Shur, M.S.: Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe. Wiley, New York (2001)
32.
go back to reference Manku, T., McGregor, J.M., Nathan, A., Roulston, D.J., Noel, J.P., Houghton, D.C.: Drift hole mobility in strained and unstrained doped Si 1-x Ge x alloys. IEEE Trans. Electron Devices 40(11), 1990–1996 (1993)CrossRef Manku, T., McGregor, J.M., Nathan, A., Roulston, D.J., Noel, J.P., Houghton, D.C.: Drift hole mobility in strained and unstrained doped Si 1-x Ge x alloys. IEEE Trans. Electron Devices 40(11), 1990–1996 (1993)CrossRef
33.
go back to reference Chen, L., Tauc, J., Lee, J.K., Schiff, E.A.: Defects in hydrogenated amorphous silicon-germanium alloys studied by photomodulation spectroscopy. Phys. Rev. B 43(14), 11–694 (1991) Chen, L., Tauc, J., Lee, J.K., Schiff, E.A.: Defects in hydrogenated amorphous silicon-germanium alloys studied by photomodulation spectroscopy. Phys. Rev. B 43(14), 11–694 (1991)
34.
go back to reference Frigeri, C., Serényi, M., Szekrényes, Z., Kamarás, K., Csik, A., Khánh, N.Q.: Effect of heat treatments on the properties of hydrogenated amorphous silicon for PV and PVT applications. Sol. Energy 119, 225–232 (2015) Frigeri, C., Serényi, M., Szekrényes, Z., Kamarás, K., Csik, A., Khánh, N.Q.: Effect of heat treatments on the properties of hydrogenated amorphous silicon for PV and PVT applications. Sol. Energy 119, 225–232 (2015)
35.
37.
go back to reference Zanzucchi, P.J., Wronski, C.R., Carlson, D.E.: Optical and photoconductive properties of discharge-produced amorphous silicon. J. Appl. Phys. 48(12), 5227–5236 (1977)CrossRef Zanzucchi, P.J., Wronski, C.R., Carlson, D.E.: Optical and photoconductive properties of discharge-produced amorphous silicon. J. Appl. Phys. 48(12), 5227–5236 (1977)CrossRef
38.
go back to reference Azizi, T., Torchani, A., Ben Karoui, M., Gharbi, R., Fathallah, M., Tresso, E.: Effect of defects on the efficiency of a-SiC: H pin based solar cells. In: IEEE International Conference on Electrical Engineering and Software Applications (ICEESA), pp. 1–5 (2013) Azizi, T., Torchani, A., Ben Karoui, M., Gharbi, R., Fathallah, M., Tresso, E.: Effect of defects on the efficiency of a-SiC: H pin based solar cells. In: IEEE International Conference on Electrical Engineering and Software Applications (ICEESA), pp. 1–5 (2013)
39.
go back to reference Wronski, C.R., Collins, R.W.: Phase engineering of a-Si: H solar cells for optimized performance. Sol. Energy 77(6), 877–885 (2004)CrossRef Wronski, C.R., Collins, R.W.: Phase engineering of a-Si: H solar cells for optimized performance. Sol. Energy 77(6), 877–885 (2004)CrossRef
40.
go back to reference Daliento, S., Lancellotti, L.: 3D analysis of the performances degradation caused by series resistance in concentrator solar cells. Sol. Energy 84(1), 44–50 (2010)CrossRef Daliento, S., Lancellotti, L.: 3D analysis of the performances degradation caused by series resistance in concentrator solar cells. Sol. Energy 84(1), 44–50 (2010)CrossRef
Metadata
Title
Numerical modeling of thermal behavior and structural optimization of a-Si:H solar cells at high temperatures
Authors
Jabbar Ganji
Abdolnabi Kosarian
Hooman Kaabi
Publication date
18-10-2016
Publisher
Springer US
Published in
Journal of Computational Electronics / Issue 4/2016
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-016-0913-3

Other articles of this Issue 4/2016

Journal of Computational Electronics 4/2016 Go to the issue