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Published in:
2012 | OriginalPaper | Chapter
Numerical Simulation of a Hydrodynamic Subband Model for Semiconductors Based on the Maximum Entropy Principle
Authors : G. Mascali, V. Romano
Published in: Scientific Computing in Electrical Engineering SCEE 2010
Publisher: Springer Berlin Heidelberg
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A hydrodynamic subband model for semiconductors has been formulated in (Mascali and Romano, IL NUOVO CIMENTO 33C:155163, 2010) by closing the moment system derived from the Schrödinger-Poisson-Boltzmann equations on the basis of the maximum entropy principle (MEP). Explicit closure relations for the fluxes and the production terms are obtained taking into account scattering of electrons with acoustic and non-polar optical phonons, as well as surface scattering. Here a suitable numerical scheme is presented for the above model together with simulations of a nanoscale silicon diode.