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Published in:
2012 | OriginalPaper | Chapter
Inverse Doping Profile of MOSFETs via Geometric Programming
Authors : Yiming Li, Ying-Chieh Chen
Published in: Scientific Computing in Electrical Engineering SCEE 2010
Publisher: Springer Berlin Heidelberg
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In this study, we optimize one-dimensional doping profiles between the interface of semiconductor and oxide to the substrate in metal-oxide-semiconductor field-effect transistors (MOSFETs). For a set of given current-voltage curves, the problem is modelled as a geometric programming (GP) problem. The MOSFET’s DC characteristics including the on- and off-state currents are simultaneously derived as functions of the doping profile in the GP problem.