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Published in:
2012 | OriginalPaper | Chapter
Numerical Simulation of Semiconductor Devices by the MEP Energy-Transport Model with Crystal Heating
Authors : Vittorio Romano, Alexander Rusakov
Published in: Scientific Computing in Electrical Engineering SCEE 2010
Publisher: Springer Berlin Heidelberg
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A new numerical model of semiconductors including crystal heating effect is presented. The model equations have been obtained with the use of the maximum entropy principle. In the numerical model the iterative scheme is used for obtaining stationary solution of electro-thermal problems. Numerical simulations of a 2D nanoscale MOSFET with the self-heating effect are presented. The difference between MEP and simpler thermal expressions is analyzed.