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Published in: Journal of Materials Science 10/2015

01-05-2015 | Original Paper

Observations of fcc and hcp tantalum

Authors: Matthew T. Janish, Paul G. Kotula, Brad L. Boyce, C. Barry Carter

Published in: Journal of Materials Science | Issue 10/2015

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Abstract

The metal tantalum has many varied uses including in microelectronics (especially in capacitors) as thin films, in medical applications as an implant material or for surgical instruments, in X-ray lithography for masks, and in high-temperature structural applications. Ta is particularly useful because it is relatively ductile, refractory in nature, and does not readily react with corrosive materials. The body-centered cubic (bcc) crystal structure of pure Ta, also known as the α-phase, is the most commonly observed, but Ta is also known to exist in two other allotropes, one tetragonal and the other (much less-well-known) face-centered cubic (fcc). The tetragonal form (β-Ta) has been produced by various deposition techniques and often occurs mixed with the α-phase; the fcc phase has only previously been reported in thin films deposited by thermal evaporation. There have been other reports of ‘bcc metals’ such as V and Fe existing with an fcc crystal structure when the metal is deposited as a thin film. In the present study, fcc Ta with a = 0.43 nm has been observed using transmission electron microscopy in bulk samples of Ta that have been subjected to quasi-static tensile deformation that was so large as to cause fracture of the material. The fcc phase has a relatively small grain size but appears to be stable at room temperature. It is also shown that relatively large grains (10–20 nm in diameter) of Ta can also exist with an hcp structure with a = 0.304 nm and c = 0.494 nm.

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Metadata
Title
Observations of fcc and hcp tantalum
Authors
Matthew T. Janish
Paul G. Kotula
Brad L. Boyce
C. Barry Carter
Publication date
01-05-2015
Publisher
Springer US
Published in
Journal of Materials Science / Issue 10/2015
Print ISSN: 0022-2461
Electronic ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-015-8931-2

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