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Semiconductors
Published in: Semiconductors 5/2014

01-05-2014 | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

On the features of hydrogen detection by a semiconductor structure grown on a 6H-SiC substrate by the combined method of platinum ion implantation and deposition

Authors: V. V. Zuev, S. N. Grigoriev, R. I. Romanov, V. Yu. Fominski, V. V. Grigoriev

Published in: Semiconductors | Issue 5/2014

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previous article Intersubband optical absorption coefficients and refractive index changes in spherical hydrogenic antidots
next article Anomalous distribution of germanium implanted into a SOI dielectric layer after the annealing of radiation defects

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Metadata
Title
On the features of hydrogen detection by a semiconductor structure grown on a 6H-SiC substrate by the combined method of platinum ion implantation and deposition
Authors
V. V. Zuev
S. N. Grigoriev
R. I. Romanov
V. Yu. Fominski
V. V. Grigoriev
Publication date
01-05-2014
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 5/2014
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S106378261405025X

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Surfaces, Interfaces, and Thin Films

Optical transmittance of thin GaAs wafers upon laser pumping in the region of exciton resonances and the continuum of states: Exciton-exciton interaction

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Photoluminescence studies of In0.7Al0.3As/In0.75Ga0.25As/In0.7Al0.3As metamorphic heterostructures on GaAs substrates

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Laser-annealing-induced features of the Raman spectra of quartz/Si and glass/Si structures

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Semiconductor behavior of nanocrystalline carbon

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