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Semiconductors
Published in: Semiconductors 5/2004

01-05-2004 | Semiconductor Structures, Interfaces, and Surfaces

On the ultimate quantum efficiency of band-edge electroluminescence in silicon barrier structures

Authors: A. V. Sachenko, A. P. Gorban’, V. P. Kostylyov

Published in: Semiconductors | Issue 5/2004

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previous article Variation in the built-in potential of a photodiode based on an n-InSe-p-GaSe heterojunction in the course of aging
next article Theory of tunneling current in metal-semiconductor contacts with subsurface isotype δ-doping

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Metadata
Title
On the ultimate quantum efficiency of band-edge electroluminescence in silicon barrier structures
Authors
A. V. Sachenko
A. P. Gorban’
V. P. Kostylyov
Publication date
01-05-2004
Publisher
Nauka/Interperiodica
Published in
Semiconductors / Issue 5/2004
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/1.1755890

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Electronic and Optical Properties of Semiconductors

Equilibrium characteristics and low-temperature photoluminescence of CdTe:Pb single crystals

Atomic Structure and Nonelectronic Properties of Semiconductors

Dependence of dicarbon annealing temperature in n-Si on oxygen concentration in the crystal

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Mobility of minority charge carriers in p-HgCdTe films

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