Issue 5/2004
Content (27 Articles)
Dependence of dicarbon annealing temperature in n-Si on oxygen concentration in the crystal
N. I. Boyarkina, S. A. Smagulova
Equilibrium characteristics and low-temperature photoluminescence of CdTe:Pb single crystals
A. V. Savitsky, O. A. Parfenyuk, M. I. Ilashchuk, A. I. Savchuk, S. N. Chupyra
Electrical properties of layered FeGaInS4 single crystals
N. N. Niftiev
Features of thermal radiation of plane-parallel semiconductor wafers
K. Yu. Guga, A. G. Kollyukh, A. I. Liptuga, V. A. Morozhenko, V. I. Pipa
Nonlinear absorption of light by Zn0.37Cd0.63Se solid solutions
A. Baidullaeva, A. I. Vlasenko, P. E. Mozol’, L. F. Shcherbonos
Mobility of minority charge carriers in p-HgCdTe films
V. S. Varavin, S. A. Dvoretskii, V. Ya. Kostyuchenko, V. N. Ovsyuk, D. Yu. Protasov
Optical properties of synthetic diamond single crystals
A. V. Mudryi, T. P. Larionova, I. A. Shakin, G. A. Gusakov, G. A. Dubrov, V. V. Tikhonov
Phase conjugation on the surface of optically excited ZnO
A. N. Gruzintsev, V. T. Volkov
Paramagnetic structural defects and conductivity in hydrogenated nanocrystalline carbon-doped silicon films
O. I. Shevaleevskii, A. A. Tsvetkov, L. L. Larina, S. Y. Myong, K. S. Lim
Electrical properties of MnIn2Se4
N. N. Niftiev, M. A. Alidzhanov, O. B. Tagiev, F. M. Mamedov, M. B. Muradov
Plasmon-phonon-polaritons in p-doped Bi-Sb alloys
N. P. Stepanov
MOCVD growth and Mg-doping of InAs layers
T. I. Voronina, T. S. Lagunova, S. S. Kizhayev, S. S. Molchanov, B. V. Pushnyi, Yu. P. Yakovlev
Coefficients of capture of free excitons by shallow acceptors and donors in gallium arsenide
K. D. Glinchuk, N. M. Litovchenko, O. N. Strilchuk
Variation in the built-in potential of a photodiode based on an n-InSe-p-GaSe heterojunction in the course of aging
S. I. Drapak, V. B. Orletskii, Z. D. Kovalyuk
On the ultimate quantum efficiency of band-edge electroluminescence in silicon barrier structures
A. V. Sachenko, A. P. Gorban’, V. P. Kostylyov
Theory of tunneling current in metal-semiconductor contacts with subsurface isotype δ-doping
V. I. Shashkin, A. V. Murel
Geometric structure and spectral characteristics of electronic states in silicon nanoparticles
S. I. Kurganskii, N. A. Borsch
Luminescence of stepped quantum wells in GaAs/GaAlAs and InGaAs/GaAs/GaAlAs structures
V. F. Agekyan, Yu. A. Stepanov, I. Akai, T. Karasava, L. E. Vorob’ev, D. A. Firsov, A. E. Zhukov, V. M. Ustinov, A. Zeilmeyer, S. Shmidt, S. Hanna, E. Zibik
Properties of self-organized SiGe nanostructures formed by ion implantation
Yu. N. Parkhomenko, A. I. Belogorokhov, N. N. Gerasimenko, A. V. Irzhak, M. G. Lisachenko
Vertical transport of hot electrons in GaAs/AlAs superlattices
D. N. Mirlin, V. F. Sapega, V. M. Ustinov
Interaction of infrared radiation with free carriers in mesoporous silicon
L. A. Osminkina, E. V. Kurepina, A. V. Pavlikov, V. Yu. Timoshenko, P. K. Kashkarov
Photoconductivity of polymer compositions with a high content of organic dyes
N. A. Davidenko, A. A. Ishchenko, L. I. Kostenko, N. G. Kuvshinsky, D. D. Mysyk, R. D. Mysyk
Tensoresistive effect in porous silicon layers with different morphology
S. P. Zimin, A. N. Bragin
ESR studies of nanocrystalline silicon films obtained by pulsed laser ablation of silicon targets
V. Ya. Bratus, S. M. Okulov, É. B. Kaganovich, I. M. Kizyak, É. G. Manoilov
Specific features of electrical transport in anisotropically nanostructured silicon
P. A. Forsh, L. A. Osminkina, V. Yu. Timoshenko, P. K. Kashkarov
Low-threshold 1.3-µm injection lasers based on single InGaAsN quantum wells
V. A. Odnoblyudov, A. Yu. Egorov, M. M. Kulagina, N. A. Maleev, Yu. M. Shernyakov, E. V. Nikitina, V. M. Ustinov
Kinetics of electroluminescence in an efficient silicon light-emitting diode with thermally stable spectral characteristics
A. M. Emel’yanov, Yu. A. Nikolaev, N. A. Sobolev, T. M. Mel’nikova