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Journal of Electronic Materials
Published in: Journal of Electronic Materials 2/2018

20-11-2017

On Using the Volatile Mem-Capacitive Effect of TiO2 Resistive Random Access Memory to Mimic the Synaptic Forgetting Process

Authors: Biplab Sarkar, Steven Mills, Bongmook Lee, W. Shepherd Pitts, Veena Misra, Paul D. Franzon

Published in: Journal of Electronic Materials | Issue 2/2018

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Metadata
Title
On Using the Volatile Mem-Capacitive Effect of TiO2 Resistive Random Access Memory to Mimic the Synaptic Forgetting Process
Authors
Biplab Sarkar
Steven Mills
Bongmook Lee
W. Shepherd Pitts
Veena Misra
Paul D. Franzon
Publication date
20-11-2017
Publisher
Springer US
Published in
Journal of Electronic Materials / Issue 2/2018
Print ISSN: 0361-5235
Electronic ISSN: 1543-186X
DOI
https://doi.org/10.1007/s11664-017-5914-x

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