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The Study of Thin Films by Electrochemical Impedance Spectroscopy Read chapter Read first chapter

2016 | OriginalPaper | Chapter

12. Optical and Photoelectric Properties of GaS, GaSe, GaTe and InSe Semiconductors and Nanocomposites Obtained by Heat Treatment in Cd and Zn Vapor

Authors : Igor Evtodiev, Iuliana Caraman, Valeriu Kantser, Dumitru Untila, Irina Rotaru, Liliana Dmitroglo, Silvia Evtodiev, Mihail Caraman

Published in: Nanostructures and Thin Films for Multifunctional Applications

Publisher: Springer International Publishing

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Abstract

GaS is an n-type semiconductor with indirect bandgap at 293 K equal to 2.5 eV. The average energy of phonons active in the formation of the edge of indirect absorption band is equal to 44.5 meV. The energy of transverse optical phonon of 23.9 meV was determined from the absorption spectra in the vibrations region of monophononic and crystal lattice. The phonons with average energy equal to 17 meV participate in the formation of the edge of indirect bandgap of GaSe crystals in absorption spectra. Direct bandgap width at 293 K is equal to 2.020 eV and 1.320 eV in GaSe and InSe, respectively. GaTe is a p-type semiconductor with direct bandgap width at 293 K equal to 1.6 eV. The edge of direct absorption in GaSe, GaTe and InSe lamellar crystals is formed by excitons with binding energy of 22 meV, 17 meV and 16 meV, respectively. Heterojonctions consisting of Cd and Zn chalcogenides and lamellar AIIIBVI semiconductors that are photosensitive in UV-VIS and NIR regions of spectrum were obtained by heat treatment of GaS, GaSe, GaTe and InSe single crystals in Cd and Zn vapor.

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previous chapter Crystalline Structure and Surface Morphology of AIIIBVI Type Lamellar Semiconductor Nanocomposites Obtained by Heat Treatment in Cd and Zn Vapor
next chapter Photoluminescence of Nanocomposites Obtained by Heat Treatment of GaS, GaSe, GaTe and InSe Single Crystals in Cd and Zn Vapor
Literature
1.
K.C. Mandal, S.H. Kang, M. Choi, J. Chen, X.C. Zhang, J.M. Schleicher, C.A. Schmuttenmaer, N.C. Fernelius, IEEE J. Sel. Top. Quantum Electron. 14, 284 (2008)CrossRef
2.
Y. Cui, D.D. Caudel, P. Bhattacharya, A. Burger, K.C. Mandal, D. Johnstone, S.A. Payne, J. Appl. Phys. 105, 053709 (2009)CrossRef
3.
C. Kubler, R. Huber, S. Tubel, A. Leitenstorfer, Appl. Phys. Lett. 85, 3360 (2004)CrossRef
4.
C. Ferrer-Roca, J. Bouvier, A. Segura, M.V. Andres, V. Munoz, J. Appl. Phys. 85, 3785 (1999)CrossRef
5.
R. Zallen, M. Slade, Phys. Rev. B 9, 1637 (1974)
6.
W.C. Eckhoff, R.S. Putnam, S. Wang, R.F. Curl, F.K. Tittel, Appl. Phys. B 63, 437 (1996)CrossRef
7.
Y.-Z. Lu, X.-B. Wang, L. Miao, D.-L. Zuo, Z.-H. Cheng, Chin. Phys. Lett. 28, 034201 (2011)CrossRef
8.
A.J. Nelson, A.M. Conway, B.W. Sturm, E.M. Behymer, C.E. Reinhardt, R.J. Nikolic, S.A. Payne, G. Pabst, K.C. Mandal, J. Appl. Phys. 106, 023717 (2009)CrossRef
9.
E. Bucher, photoelectrochemistry and photovoltaics of layered semiconductors, in Physics and Chemistry of Materials with Low-Dimensional Structures, ed. by A. Aruchamy (Kluwer Academic Publishers, Dordrecht, 1992), pp. 1–81
10.
D.J. Late, B. Liu, J. Luo, A. Yan, H.S.S. Ramakrishna Matte, M. Grayson, C.N.R. Rao, V.P. Dravid, Adv. Mater. 24, 3549 (2012)
11.
12.
A. Seyhan, O. Karabulut, B.G. Akįnoğlu, B. Aslan, R. Turan, Cryst. Res. Technol. 40, 893 (2005)CrossRef
13.
14.
15.
J.V Acrivos, Intercalated layered materials, On The Intercalation Reaction, ed. by F. Levy (D. Reidel Publishing Company, Dordrecht, 1979), pp. 33–99
16.
Z.D. Kovalyuk, M.M. Pyrlya, V.B. Boledzyuk, J. Optoelectron. Adv. Mater. 5, 869 (2003)
17.
18.
Z.D. Kovalyuk, V.B. Boledzyuk, V.V. Shevchyk, V.M. Kaminskii, A.D. Shevchenko, Semiconductors 46, 971 (2012)CrossRef
19.
I.I. Grigorchak, V.V. Netyaga, Z.D. Kovalyuk, J. Phys.: Condens. Matter 9, L191 (1997)
20.
B.A. Orlowski, I.A. Kowalik, B.J. Kowalski, M. Suffczynski, A. Mycielski, S. Colonna, C. Ottaviani, F. Ronci, A. Cricenti, J. Alloy. Compd. 382, 224 (2004)CrossRef
21.
E.J. Johnson, Semiconductors and semimetals, in Optical Properties of III–V Compounds, ed. by A.C. Beers, R.K. Willardson. (Academic Press, New York, 1967), p. 169
22.
R. Le Toullec, N. Piccioli, M. Mejatty, M. Balkanski, Nuovo Cimento B 38, 159 (1977)CrossRef
23.
24.
25.
M. Schlüter, J. Camassel, S. Kohn, J.P. Voitchovsky, Y.R. Shen, M.L. Cohen, Phys. Rev. B 13, 3534 (1976)CrossRef
26.
G.M. Mamedov, M. Karabulut, A.O. Kodolbaş, O. Oktu, Phys. Stat. Sol. (b) 242, 2885 (2005)CrossRef
27.
28.
29.
J.J. Forney, K. Maschke, E. Mooser, J. Phys. C: Solid State Phys. 10, 1887 (1977)CrossRef
30.
U. Schwarz, D. Olguin, A. Cantarero, M. Hanfland, K. Syassen, Phys. Stat. Sol. (b) 244, 244 (2007)
31.
S.-R. Zhang, S.-F. Zhu, B.-J. Zhao, L.-H. Xie, K.-H. Song, Phys. B 436, 188 (2014)CrossRef
32.
L. Ghalouci, B. Benbahi, S. Hiadsi, B. Abidri, G. Vergoten, F. Ghalouci, Comput. Mater. Sci. 67, 73 (2013)CrossRef
33.
L. Plucinski, R.L. Johnson, B.J. Kowalski, K. Kopalko, B.A. Orlowski, Z.D. Kovalyuk, G.V. Lashkarev, Phys. Rev. B 68, 125304 (2003)CrossRef
34.
R. Le Toullec, N. Piccioli, J.C. Chervin, Physical Review B 22, 6162 (1980)CrossRef
35.
N.E. Christensen, High pressure in semiconductors physics, in Semiconductors and Semimetals, vol. 54, ed. by E.R. Webber R.K. Willardson (Academic Press, New York, 1998), p. 40
36.
37.
38.
D. Errandonea, A. Segura, F.J. Manjyn, A. Chevy, E. Machado, G. Tobias, P. Ordejyn, E. Canadell, Phys. Rev. B 71, 125206 (2005)CrossRef
39.
40.
S. Nagell, A. Baldereschi, K. Maschke, J. Phys. C: Solid State Phys. 12, 1625 (1979)CrossRef
41.
Y. Fan, T. Schittkowski, M. Bauer, L. Kador, K.R. Allakhverdiev, EYu. Salaev, J. Lumin. 98, 7 (2002)CrossRef
42.
43.
T.S. Moss, G.J. Burrell, B. Ellis, in Semiconductor Opto-electronics, vol. 67 (Butterworths, London, 1973)
44.
45.
M. Gauthier, A. Polian, J.M. Besson, A. Chevy, Phys. Rev. B 40, 3837 (1989)CrossRef
46.
J.F. Sanchez-Royo, A. Segura, A. Chevy, L. Roa, J. Appl. Phys. 79, 204 (1996)CrossRef
47.
48.
49.
50.
V.P. Gribkovskii, Theory of Absorption and Emission of Light in Semiconductors (Science and Technology, Minsk, 1975)
51.
I. Gnatenko, M. Kurik, Fizika I tekhnika poluprovodnikov 5, 1347 (1971)
52.
53.
54.
J. Tauc (ed.), Amorphous and Liquid Semiconductors (Plenum Press, New York, 1974), p. 444
55.
56.
57.
Zh. Pankove, in Optical Processes in Semiconductors (Mir, Moscow, 1973)
58.
K. Wei, H.F. Pollak, J.L. Freeouf, D. Shvydka, A.D. Compaan, J. Appl. Phys. 85, 7418 (1999)CrossRef
59.
E. Doni, R. Girlanda, V. Grasso, A. Balzarotti, M. Piacentini, Il Nuovo Cimento B 51, 154 (1979)
60.
V. Riede, H. Neumann, H.X. Nguyen, H. Sobotta, F. Levy, Physica 100B, 355 (1980)
61.
62.
63.
T. Siciliano, M. Tepore, A. Genga, G. Micocci, M. Siciliano, A. Tepore, Vacuum 92, 65 (2013)CrossRef
64.
A.M. Kulibekov, H.P. Olijnyk, A.P. Jephcoat, Z.Y. Salaeva, S. Onari, K.R. Allakhverdiev, Phys. Stat. Sol. (b) 235, 517 (2003)CrossRef
65.
E. Filippo, M. Siciliano, A. Genga, G. Micocci, A. Tepore, T. Siciliano, Mater. Res. Bull. 48, 1741 (2013)CrossRef
66.
67.
N.M. Gasanly, A. Aydinli, H. Ozkan, C. Kocabas, Solid State Commun. 116, 147 (2000)CrossRef
68.
J. Camassel, P. Merle, H. Mathieu, A. Chevy, Phys. Rev. B 17, 4718 (1978)
69.
70.
71.
C. Rocha Leao, V. Lordi, Physical review b 84, 165206 (2011)
72.
P.M. Reshmi, A.G. Kunjomana, K.A. Chandrasekharan, M. Meena, C.K. Mahadevan, Int. J. Soft Comput. Eng. 1, 228 (2011)
73.
A. Yamamoto, A. Syouji, T. Goto, E. Kulatov, K. Ohno, Y. Kawazoe, K. Uchida, N. Miura, Phys. Rev. B 64, 035210 (2001)
74.
W.W. Wendlandt, H.G. Hecht (ed.), Reflectance Spectroscopy (Wiley Interscience, New York, 1966), p. 298
75.
76.
77.
Metadata
Title
Optical and Photoelectric Properties of GaS, GaSe, GaTe and InSe Semiconductors and Nanocomposites Obtained by Heat Treatment in Cd and Zn Vapor
Authors
Igor Evtodiev
Iuliana Caraman
Valeriu Kantser
Dumitru Untila
Irina Rotaru
Liliana Dmitroglo
Silvia Evtodiev
Mihail Caraman
Copyright Year
2016
Book
Nanostructures and Thin Films for Multifunctional Applications

Print ISBN: 978-3-319-30197-6

Electronic ISBN: 978-3-319-30198-3

Copyright Year: 2016

DOI
https://doi.org/10.1007/978-3-319-30198-3_12

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