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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 9/2018

30-01-2018

Optimal conditions for fabricating CIGS nanoparticles by solvothermal method

Authors: E. Ghanbari, M. Zahedifar, O. Amiri

Published in: Journal of Materials Science: Materials in Electronics | Issue 9/2018

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Abstract

CIGS nanoparticles (NPs) were synthesized by solvothermal method. The effects of using argon and nitrogen as autoclave atmosphere and also metallic indium (Inmet) and InCl3 as indium precursors at different temperature profiles on crystalline phase of the fabricated CIGS NPs were investigated. Results show that producing single phase CIGS in N2 atmosphere is not possible. In Ar atmosphere, CuIn0.5Ga0.5Se2 pure phase was formed only by using InCl3 as indium precursor. In addition to CIGS, CuGaSe2 can also be observed, but CIS phase is not formed by using this approach. The particle size in the range of 20–45 nm was detected by XRD and SEM images. UV–visible absorption spectrum showed a broad peak in UV–visible range. Also reported is the unusual behavior of the produced NPs in different atmospheres.
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Metadata
Title
Optimal conditions for fabricating CIGS nanoparticles by solvothermal method
Authors
E. Ghanbari
M. Zahedifar
O. Amiri
Publication date
30-01-2018
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 9/2018
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-8694-z

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