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Published in:
01-08-2013
Orientation control of a seeding layer and its effect on structure, ferro- and piezoelectric properties of sol–gel derived Bi3.15Nd0.85Ti3O12 thin films
Published in: Journal of Materials Science: Materials in Electronics | Issue 8/2013
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Abstract
We report on the orientation control of a seeding layer for sol–gel derived Bi3.15Nd0.85Ti3O12 thin films by optimizing the layer thickness and processing parameters including annealing temperature and time. A 75-nm-thick seeding layer with (100) preferential orientation can be obtained on SiO2/Si substrate by annealing at 560 °C for 3 min. The Bi3.15Nd0.85Ti3O12 thin film grown on this optimized seeding layer exhibits a much higher relative intensity of (200) X-ray diffraction peak, which in turn results in more squared P–E hysteresis loops, larger remanent polarization (2P
r ~ 62 μC/cm2) and piezoelectric coefficient (d
33 ~ 74 pm/V) compared to the film without the optimized first layer prepared using the conventional sequential layer annealing method.