3. Oxidation des Siliziums

2019
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Author: Ulrich Hilleringmann
Published in: Silizium-Halbleitertechnologie
Publisher: Springer Fachmedien Wiesbaden

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Zusammenfassung

Siliziumdioxid lässt sich durch thermische Oxidation in einer Sauerstoff enthaltenden Atmosphäre erzeugen. Das Schichtwachstum wird mit einem einfachen Modell über einen linearen und einen parabolischen Anteil beschrieben. Es ist sowohl für die trockene als auch für die feuchte Oxidation gültig. Auch Abscheideverfahren für Siliziumdioxid werden angesprochen.

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Metadata
Literature

Title: Oxidation des Siliziums
Author: Ulrich Hilleringmann
Publisher: Springer Fachmedien Wiesbaden
Book: Silizium-Halbleitertechnologie
Print ISBN: 978-3-658-23443-0

Electronic ISBN: 978-3-658-23444-7

Copyright Year: 2019
DOI: https://doi.org/10.1007/978-3-658-23444-7_3

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