Skip to main content
Disciplines
Automotive Business IT + Informatics Construction + Real Estate Electrical Engineering + Electronics Energy + Sustainability Insurance + Risk Finance + Banking Management + Leadership Marketing + Sales Mechanical Engineering + Materials
Events
DE
EN
Books
Journals
Topic Page
Marketing
Start single access now
Access for companies
EXTENDED SEARCH
Log in
Top
Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 21/2017

21-07-2017

P-type single-crystalline ZnO films obtained by (Li, N) dual implantation through dynamic annealing process

Authors: Zhiyuan Zhang, Jingyun Huang, Shanshan Chen, Xinhua Pan, Lingxiang Chen, Zhizhen Ye

Published in: Journal of Materials Science: Materials in Electronics | Issue 21/2017

Log in

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

Single-crystalline ZnO films were grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy technique. The films have been implanted with fixed fluence of 30 keV Li and 80 keV N ions at 460 °C. It is shown that dually-implanted single crystalline ZnO films exhibit p-type characteristics with hole concentration in the range of 2.5 × 1015–2.3 × 1016 cm−3, hole mobilities between 0.8 and 1.04 cm2 V−1 s−1, and resistivities in the range of 328.9–2081 Ω cm by Hall-effect measurements. The ZnO film exhibit (0002) (c-plane) orientation with no secondary phase appearing after implantation as identified by the X-ray diffraction pattern. It is confirmed that Li and N ions were effectively implanted and successfully behave as acceptor measured by XPS and SIMS results. Also compared to other similar studies, lower amount of Li and N ions make p-type characteristics excellent. It is concluded that Li and N ion implantation and dynamic annealing play a critical role in forming p-type single-crystalline ZnO films.
previous article Hydrothermal green synthesis and photocatalytic activity of magnetic CoFe2O4–carbon quantum dots nanocomposite by turmeric precursor
next article Novel MnMoO4 nanofibers: preparation, microstructure analysis and optical properties

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

inform now
Literature
1.
D.-C. Perng, M.-H. Hong, K.-H. Chen, K.-H. Chen, Enhancement of short-circuit current density in Cu2O/ZnO heterojunction solar cells. J. Alloys Compd. 695, 549–554 (2017)CrossRef
2.
H. Wang, K. Li, Y. Tao, J. Li, Y. Li, L.-L. Gao, G.-Y. Jin, Y. Duan, Smooth ZnO: Al-AgNWs composite electrode for flexible organic light-emitting device. Nanoscale Res. Lett. 12, 1–7 (2017)CrossRef
3.
S.-H. Kim, G.-I. Shim, S.-Y. Choi, Fabrication of Nb-doped ZnO nanowall structure by RF magnetron sputter for enhanced gas-sensing properties. J. Alloys Compd. 698, 77–86 (2017)CrossRef
4.
S.Y. Liu, S.J. Peng, J. Ma, G.J. Li, X.S. Qin, M.M. Li, Q. Wang, Structure and thermoelectric properties of Al-doped ZnO films prepared by thermal oxidization under high magnetic field. Superlattices Microstruct. 104, 282–290 (2017)CrossRef
5.
A.R. Liu, K.F. Yin, L. Mi, M.Y. Ma, Y.J. Liu, Y. Li, W. Wei, Y.J. Zhang, S.Q. Liu, A novel photoelectrochemical immunosensor by integration of nanobody and ZnO nanorods for sensitive detection of nucleoside diphosphatase kinase-A. Anal. Chim. Acta 973, 82–90 (2017)CrossRef
6.
S.J. Huang, C.H. Hsieh, A method to enhance the predictive maintenance of ZnO arresters in energy systems. Int. J. Electr. Power 77, 327–334 (2016)CrossRef
7.
P. Keil, T. Frömling, A. Klein, J. Rödel, N. Novak, Piezotronic effect at Schottky barrier of a metal-ZnO single crystal interface. J. Appl. Phys. 121, 155701 (2017)CrossRef
8.
S. Zhao, Y.W. Zhang, Y.M. Zhou, C. Zhang, X.L. Sheng, J.S. Fang, M.Y. Zhang, Y. Yang, Ionic liquid-assisted synthesis of highly dispersive bowknot-like ZnO microrods for photocatalytic applications. Appl. Surf. Sci. 400, 269–276 (2017)CrossRef
9.
E. Lizundia, L. Ruiz-Rubio, J.L. Vilas, L.M. Leon, Poly(L-lactide)/ZnO nanocomposites as efficient UV-shielding coatings for packaging applications. J. Appl. Polym. Sci. 133, 42426 (2016)CrossRef
10.
11.
J.G. Lu, Y.Z. Zhang, Z.Z. Ye, L.P. Zhu, L. Wang, B.H. Zhao, Q.L. Liang, Low-resistivity, stable p-type ZnO thin films realized using a Li-N dual-acceptor doping method. Appl. Phys. Lett. 88, 222114 (2006)CrossRef
12.
Y.J. Zeng, Z.Z. Ye, W.Z. Xue, Dopant source choice for formation of p-type ZnO: Li acceptor. Appl. Phys. Lett. 88, 062107 (2006)CrossRef
13.
P. Ding, X.H. Pan, Z.Z. Ye, Realization of p-type non-polar a-plane ZnO films via doping of Na acceptor. Solid State Commun. 156, 8–11 (2013)CrossRef
14.
Y.J. Zeng, Z.Z. Ye, W.Z. Xue, Study on the Hall-effect and photoluminescence of N-doped p-type ZnO films. Mater. Lett. 61, 41–44 (2007)CrossRef
15.
G.-T. Du, W. Zhao, G.-G. Wu, Electrically pumped lasing from p-ZnO/n-GaN heterojunction diodes. Appl. Phys. Lett. 101, 053503 (2012)CrossRef
16.
Z. Shi, Y. Zhang, B. Wu, Vertical conducting ultraviolet light-emitting diodes based on p-ZnO:As/n-GaN/n-SiC heterostructure. Appl. Phys. Lett. 102, 161101 (2013)CrossRef
17.
L.J. Mandalapu, Z. Yang, S. Chu, J.L. Liu, Ultraviolet emission from Sb-doped p-type ZnO based heterojunction light-emitting diodes. Appl. Phys. Lett. 92, 122101 (2008)CrossRef
18.
T.M. Barnes, K. Olson, C.A. Wolden, On the formation and stability of pp-type conductivity in nitrogen-doped zinc oxide. Appl. Phys. Lett. 86, 112112 (2005)CrossRef
19.
L.G. Wang, A. Zunger, Cluster-doping approach for wide-gap semiconductors: the case of p-type ZnO. Phys. Rev. Lett. 90, 256401 (2003)CrossRef
20.
S. Limpijumnong, S.B. Zhang, S.H. Wei, C.H. Park, Doping by large-size-mismatched impurities: the microscopic origin of arsenic- or antimony-doped p-type zinc oxide. Phys. Rev. Lett. 92, 155504 (2004)CrossRef
21.
C.H. Park, S.B. Zhang, S.H. Wei, Origin of p-type doping difficulty in ZnO: the impurity perspective. Phys. Rev. B 66, 073202 (2002)CrossRef
22.
B.Y. Zhang, B. Yao, Y.F. Li, Z.Z. Zhang, B.H. Li, C.X. Shan, D.X. Zhao, D.Z. Shen, Investigation on the formation mechanism of p-type Li-N dual-doped ZnO. Appl. Phys. Lett. 97, 222101 (2010)CrossRef
23.
J.-J. Yang, Q.-Q. Fang, W.-N. Wang, D.-D. Wang, C. Wang, Pulsed laser deposition of Li-N dual acceptor in p-ZnO:(Li, N) thin film and the p-ZnO:(Li, N)/n-ZnO homojunctions on Si(100). J. Appl. Phys. 115, 124509 (2014)CrossRef
24.
X.H. Wang, B. Yao, D.Z. Shen, Z.Z. Zhang, B.H. Li, S.J. Pearton, D.P. Norton, K. Ip, Y.W. Heo, T. Steiner, Recent progress in processing and properties of ZnO. Prog. Mater. Sci. 50, 293–340 (2005)CrossRef
25.
A. Powell, W.E. Spicer, J.C. McMenamin, Location of the Zn 3d States in ZnO. Phys. Rev. Lett. 27, 97–100 (1971)CrossRef
26.
S.J. Pearton, D.P. Norton, K. Ip, Y.W. Heo, T. Steiner, Recent progress in processing and properties of ZnO. Prog. Mater. Sci. 50, 293–340 (2005)CrossRef
27.
M.X. Qiu, X.Q. Gu, Z.Z. Ye, J.G. Lu, H.P. He, Y.Z. Zhang, B.H. Zhao, p-type behavior of nitrogen doped, lithium doped, and nitrogen-lithium codoped Zn0.11Mg0.89O thin films. J. Vac. Sci. Technol. 27, 1897–1900 (2009)CrossRef
28.
Z.Z. Zhi, Y.C. Liu, B.S. Li, X.T. Zhang, Y.M. Lu, D.Z. Shen, X.W. Fan, Effects of thermal annealing on ZnO films grown by plasma enhanced chemical vapour deposition from Zn(C2H5)2 and CO2 gas mixtures. J. Phys. D 36, 719–722 (2003)CrossRef
29.
A.Q. Chen, Z. Hai, Y.Y. Wu, M.M. Chen, Y. Zhu, X.C. Gui, Z.K. Tang, Beryllium-assisted p-type doping for ZnO homojunction light-emitting devices. Adv. Funct. Mater. 26, 3696–3702 (2016)CrossRef
30.
N. Yuan, J. Li, L. Fan, Structure, electrical and optical properties of N-In codoped ZnO thin films prepared by ion-beam enhanced deposition method. J. Crystal. Growth 290, 156–160 (2006)CrossRef
31.
H. Shen, C.X. Shan, J.S. Liu, B.H. Li, Z.Z. Zhang, D.Z. Shen, Stable p-type ZnO films obtained by lithium-nitrogen codoping method. Phys. Status Solidi B 250, 2102–2105 (2013)
32.
C. Bundesmann, N. Ashkenov, M. Schubert, D. Spemann, T. Butz, E.M. Kaidashev, M. Lorenz, M. Grundmann, Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga, and Li. Appl. Phys. Lett. 83, 1974 (2003)CrossRef
33.
J.G. Reynolds, C.L. Reynolds, A. Mohanta, J.F. Muth, J.E. Rowe, H.O. Everitt, D.E. Aspnes, Shallow acceptor complexes in p-type ZnO. Appl. Phys. Lett. 102, 152114 (2013)CrossRef
Metadata
Title
P-type single-crystalline ZnO films obtained by (Li, N) dual implantation through dynamic annealing process
Authors
Zhiyuan Zhang
Jingyun Huang
Shanshan Chen
Xinhua Pan
Lingxiang Chen
Zhizhen Ye
Publication date
21-07-2017
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 21/2017
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-017-7523-0

Other articles of this Issue 21/2017

Journal of Materials Science: Materials in Electronics 21/2017 Go to the issue

OriginalPaper

Impact of structural, morphological and electrical properties of GdxTi1−xO2 nanocomposites on the photocatalytic degradation of Rhodamine B dye

OriginalPaper

Facile synthesis of a symmetrical squarylium dye sensitized SnIn4S8 composites with enhanced photocatalytic activity under visible-light irradiation

OriginalPaper

Synthesis, characterization, material properties and sensor application study of polyaniline/niobium doped titanium dioxide nanocomposites

OriginalPaper

Synthetic analysis on the IZTO thin films deposited on various plastic substrates with the buffer layer

OriginalPaper

Strong photoluminescence and high piezoelectric properties of Eu-doped (Ba0.99Ca0.01)(Ti0.98Zr0.02)O3 ceramics

OriginalPaper

Critical thickness in LaNiO3 ultrathin films: the influence of underlayer