2007 | OriginalPaper | Chapter
Pearson Effective Potential vs. Multi-Subband Monte-Carlo Simulation for Electron Transport in DG nMOSFETs
Authors : M. -A. Jaud, S. Barraud, J. Saint-Martin, A. Bournel, P. Dollfus, H. Jaouen
Published in: Simulation of Semiconductor Processes and Devices 2007
Publisher: Springer Vienna
Activate our intelligent search to find suitable subject content or patents.
Select sections of text to find matching patents with Artificial Intelligence. powered by
Select sections of text to find additional relevant content using AI-assisted search. powered by
We present a comparison between two-different approaches to including quantum effects in a Monte-Carlo simulator. The ability of our original Pearson Effective Potential (PEP) correction to correctly account for electrostatic quantum effects has been demonstrated on double-gate nMOS capacitors with different film thicknesses. In this work, results obtained from semi-classical, PEP corrected and multi-subband Monte-Carlo approaches are reported for a double-gate nMOSFET with a channel length L
C
= 20nm and a silicon film thickness T
Si
= 8 nm at low and high drain voltages. For the first time, excellent agreements are obtained between quantum corrected and multi-subband Monte-Carlo methods on both electrical characteristics and microscopic quantities.