Performance of a Low-Power 6T-SRAM Cell for Energy-Efficient Leakage Reduction Using DTMOS Technique

Leakage current consumes the majority of the active mode energy in the high-performance integrated circuits of today. In particular, in high microprocessor and system-on-chip architectures, the SRAM cell array is the primary source of leakage current. So low-leakage SRAM design is essential. Today’s VLSI designs are all about cutting down on power dissipation, supply voltage, leakage currents, and chip area. However, raising these parameters increases sub-threshold leakage currents and power dissipation, reducing design performance. Increasing the cell area reduces leakage power dissipation in standby mode. To solve these problems, it is best to cut down on effective leakage currents and dynamic power dissipation. For low voltage and energy constraints, the power dissipation, area, and delay performance of the low-power design of the 6T-SRAM cell with the DTMOS technique for a proposed low-power SRAM will be implemented in the Tanner EDA tool in 22 nm technology. The power of both types of SRAM cells will be compared using low-power techniques and a power analysis.