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Semiconductors
Published in: Semiconductors 1/2007

01-01-2007 | Semiconductor Structures, Interfaces, and Surfaces

Photoelectric phenomena in the Cu (Al, In)/p-CuIn3Se5 Schottky barriers

Authors: I. V. Bodnar’, V. Yu. Rud, Yu. V. Rud’

Published in: Semiconductors | Issue 1/2007

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previous article Capacitance-voltage characteristics of the p-Cd0.27Hg0.73Te-based structures with a wide-gap graded-gap surface layer
next article Schottky barriers based on n-In2S3 films obtained by laser-induced evaporation

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Metadata
Title
Photoelectric phenomena in the Cu (Al, In)/p-CuIn3Se5 Schottky barriers
Authors
I. V. Bodnar’
V. Yu. Rud
Yu. V. Rud’
Publication date
01-01-2007
Publisher
Nauka/Interperiodica
Published in
Semiconductors / Issue 1/2007
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782607010101

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Electronic and Optical Properties of Semiconductors

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Low-Dimensional Systems

Efficient second-harmonic generation in a double-quantum-well structure

Atomic Structure and Nonelectronic Properties of Semiconductors

Accumulation of structural defects in silicon irradiated with PF n + cluster ions with medium energies

Physics of Semiconductor Devices

Potential of using the Cd0.8Hg0.2Te alloy in solar cells

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