Issue 1/2007
Content (21 Articles)
Temperature dependence of the coefficient of linear thermal expansion of single-crystal SmS
V. V. Kaminskiĭ, S. M. Luguev, Z. M. Omarov, N. V. Sharenkova, A. V. Golubkov, L. N. Vasil’ev, S. M. Solov’ev
Accumulation of structural defects in silicon irradiated with PF n + cluster ions with medium energies
A. Yu. Azarov, A. I. Titov
Electrical properties of ZnSiAs2 irradiated with protons
V. N. Brudnyĭ, T. V. Vedernikova
Frenkel thermal-field effect in MnGaInS4 layered single crystals
N. N. Niftiev, O. B. Tagiev
Contraction of the conducting region in an intrinsic semiconductor due to joule self-heating
F. N. Rybakov, A. V. Melkikh, A. A. Povzner
Electrical properties and structure of chalcogenide glasses containing bivalent tin
G. A. Bordovskiĭ, R. A. Castro, P. P. Seregin, E. I. Terukov
Optical properties of CuIn5Se8 single crystals
I. V. Bodnar’
Quasi-static capacitance of a weakly compensated semiconductor with hopping conduction (on the example of p-Si:B)
N. A. Poklonski, S. A. Vyrko, A. G. Zabrodskii
Capacitance-voltage characteristics of the p-Cd0.27Hg0.73Te-based structures with a wide-gap graded-gap surface layer
V. V. Vasil’ev, Yu. P. Mashukov
Photoelectric phenomena in the Cu (Al, In)/p-CuIn3Se5 Schottky barriers
I. V. Bodnar’, V. Yu. Rud, Yu. V. Rud’
Schottky barriers based on n-In2S3 films obtained by laser-induced evaporation
I. V. Bodnar’, V. A. Polubok, V. F. Gremenok, V. Yu. Rud’, Yu. V. Rud’
Photoelectric properties of In/In2Se3 structures
G. A. Il’chuk, V. V. Kus’nézh, R. Yu. Petrus’, V. Yu. Rud’, Yu. V. Rud’, V. O. Ukrainets
Specific features of molecules’ pyrolysis on the epitaxial surface in the case of growth of the Si1 − x Ge x layers from hydrides in vacuum
L. K. Orlov, S. V. Ivin
Efficient second-harmonic generation in a double-quantum-well structure
A. Zh. Khachatrian, D. M. Sedrakian, V. D. Badalyan, V. A. Khoetsyan
Lateral ordering of quantum dots and wires in the (In,Ga)As/GaAs(100) multilayer structures
V. V. Strel’chuk, P. M. Lytvyn, A. F. Kolomys, M. Ya. Valakh, Yu. I. Mazur, Zh. M. Wang, G. J. Salamo
Atomic defects of the walls and the electronic structure of molybdenum disulfide nanotubes
A. N. Enyashin, A. L. Ivanovskiĭ
Quantum efficiency and formation of the emission line in light-emitting diodes based on InGaN/GaN quantum well structures
N. I. Bochkareva, D. V. Tarkhin, Yu. T. Rebane, R. I. Gorbunov, Yu. S. Lelikov, I. A. Martynov, Yu. G. Shreter
Potential of using the Cd0.8Hg0.2Te alloy in solar cells
L. A. Kosyachenko, V. V. Kulchinsky, S. Yu. Paranchych, V. M. Sklyarchuk
Silicon-on-insulator nanotransistors with two independent gates
O. V. Naumova, M. A. Il’nitskiĭ, L. N. Safronov, V. P. Popov
A method for calculating the transient time of a multi-stage thermoelectric cooler
Yu. I. Ravich, A. N. Gordienko
Instability of characteristics of SiC detectors subjected to extreme fluence of nuclear particles
A. M. Ivanov, N. B. Strokan, E. V. Bogdanova, A. A. Lebedev