Photon Radiation Annealing of Ion-Implanted Silicon

Transient annealing of ion-implanted semiconductors has recently recieved considerable attention. Photon beam radiation from a graphite heater, a halogen lamp or an arc lamp is utilized for transient annealing for a few seconds[1,2,3]. One of the advantages of rapid annealing is the possibility of activation of implanted dopants without their redistribution. This is desirable for making shallow junctions which are required in high density and high speed VLSI and the three-dimensional IC’s. In this paper, we present the characteristics of rapid annealing of ion-implanted silicon by using photon beam radiation from a graphite heater. Activation and redistribution of dopants were studied by the measurements of sheet resistance and the secondary ion mass spectroscopy (SIMS). Recovery of crystallinity and the secondary defects in the ion-implanted layer were observed by transmission electron microscopy (TEM).