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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 6/2018

15-12-2017

PL and ESR of Gd3+ in LaMgAl11O19 phosphors

Authors: Vijay Singh, N. Singh, M. S. Pathak, S. Watanabe, T. K. Gundu Rao, Pramod K. Singh, Young-Wan Kwon

Published in: Journal of Materials Science: Materials in Electronics | Issue 6/2018

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Abstract

LaMgAl11O19 doped with different concentrations of gadolinium phosphors were synthesized by combustion and characterized using X-Ray diffraction to identify the crystalline phase. Photoluminescence studies on the sample showed emission peaks at 313 and 306 nm with λexi = 273 nm corresponding to the 6P J → 8S7/2 transitions of Gd3+ ions. In phosphors with low dopant concentrations, dominant electron spin resonance lines are observed with g eff ~ 1.96, 1.98, 4.2, and 6.0. With increasing concentrations, the spectrum appears to be U-shaped, and main lines are seen at g eff ~ 1.98, 2.04, 2.8, 4.1 and 6.2. Distortions in the immediate environment of Gd3+ ions lead to relatively strong crystal fields and the appearance of lines in the low field region of the spectrum.
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Metadata
Title
PL and ESR of Gd3+ in LaMgAl11O19 phosphors
Authors
Vijay Singh
N. Singh
M. S. Pathak
S. Watanabe
T. K. Gundu Rao
Pramod K. Singh
Young-Wan Kwon
Publication date
15-12-2017
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 6/2018
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-017-8414-0

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