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Published in: Journal of Materials Science: Materials in Electronics 2/2013

01-02-2013

Preparation and characterization of ATO nanoparticles by various coprecipitation

Authors: Shimin Liu, Weiwei Jiang, Chaoqian Liu, Wanyu Ding, Weiping Chai

Published in: Journal of Materials Science: Materials in Electronics | Issue 2/2013

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Abstract

A series of Sb doped SnO2 (ATO) nanoparticles, with Sb doping levels 0–20 at.% has been prepared by two different coprecipitation routes. Effect of preparation process, Sb doping concentration and calcination temperature on the crystallinity and morphology of ATO nanoparticles were investigated and analyzed. The prepared nanoparticles were characterized by Fourier transform infrared spectroscopy, scanning electron microscopy, transmission electron microscopy, selective area electron diffraction, X-ray diffraction and energy dispersive X-ray spectroscopy. Results indicated that the prepared ATO nanoparticles were tetragonal, and isostructural with rutile lattice structure as known from bulk SnO2. The ATO nanoparticles prepared via process I (homogeneous coprecipitation) presented obviously weaker crystallinity, smaller average crystallite size and harder agglomeration than that prepared via process II (heterogeneous coprecipitation). The crystallinity and average crystallite size of ATO nanoparticles prepared via process II increased with increasing calcination temperatures and reducing Sb doping concentrations, respectively. The increased crystallinity, dispersibility and average crystallite size for ATO nanoparticles prepared via process II may be due to the formation of ATO crystal nuclei, leading to an improved formation dynamics of ATO nanoparticles.

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Metadata
Title
Preparation and characterization of ATO nanoparticles by various coprecipitation
Authors
Shimin Liu
Weiwei Jiang
Chaoqian Liu
Wanyu Ding
Weiping Chai
Publication date
01-02-2013
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 2/2013
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-012-0949-5

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