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Published in:
1982 | OriginalPaper | Chapter
Profiles of Implanted or Diffuses Dopants (Be, Zn, Cr, Se) in Indium Phosphide
Authors : M. Gauneau, A. Rupert, P. N. Favennec
Published in: Secondary Ion Mass Spectrometry SIMS III
Publisher: Springer Berlin Heidelberg
Included in: Professional Book Archive
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Indium phosphide is of technological interest since it has been shown that optical fiber communications systems in the 1.1–1.6 µm range could be based on the InP/InGaAsP material. It is of primary importance to develop appropriate device fabricating techniques both for InP itself and alloys grown on it. The paper to be presented is concerned with the SIMS technique applied to the determination of some dopant profiles, i.e. Be, Zn as p-type, Se as n-type and Cr in semi-insulating substrates.