Skip to main content
Disciplines
Automotive Business IT + Informatics Construction + Real Estate Electrical Engineering + Electronics Energy + Sustainability Insurance + Risk Finance + Banking Management + Leadership Marketing + Sales Mechanical Engineering + Materials
Events
DE
EN
Books
Journals
Topic Page
Marketing
Start single access now
Access for companies
EXTENDED SEARCH
Log in
Top
Rare Metals
Published in: Rare Metals 9/2017

21-06-2017

Rapid and nondestructive layer number identification of two-dimensional layered transition metal dichalcogenides

Authors: Jia-Peng Wu, Le Wang, Li-Yuan Zhang

Published in: Rare Metals | Issue 9/2017

Log in

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

MoS2, MoSe2 and WSe2 thin flakes were fabricated by the standard micromechanical cleavage procedures. The thickness and the optical contrast of the atomic thin dichalcogenide flakes on SiO2/Si substrates were measured by atomic force microscopy (AFM) and spectroscopic ellipsometer. A rapid and nondestructive method by using reflection spectra was proposed to identify the layer number of 2D layered transition metal dichalcogenides on SiO2 (275 nm)/Si substrates. The contrast spectra of 2D nanosheets with different layer numbers are in agreement with theoretical calculations based on Fresnel’s law, indicating that this method provides an unambiguous and nondestructive contrast spectra fingerprint for identifying single- and few-layered transition metal dichalcogenides. The results will greatly help in fundamental research and application.
previous article Self-etching Ni–Co hydroxides@Ni–Cu nanowire arrays with enhancing ultrahigh areal capacitance for flexible thin-film supercapacitors
next article Synthesis and microwave absorbing properties of La-doped Sr-hexaferrite nanopowders via sol–gel auto-combustion method

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

inform now
Literature
[1]
Novoselov KS, Geim AK, Morozov SV, Jiang D, Zhang Y, Dubonos SV, Grigorieva IV, Firsov AA. Electric field effect in atomically thin carbon films. Science. 2004;306(5696):666.CrossRef
[2]
Novoselov KS, Jiang D, Schedin F, Booth TJ, Khotkevich VV, Morozov SV, Geim AK. Two-dimensional atomic crystals. Proc Natl Acad Sci USA. 2005;102(30):10451.CrossRef
[3]
Gorbachev RV, Riaz I, Nair RR, Jalil R, Britnell L, Belle BD, Hill EW, Novoselov KS, Watanabe K, Taniguchi T, Geim AK, Blake P. Hunting for monolayer boron nitride: optical and Raman signatures. Small. 2011;7(4):465.CrossRef
[4]
Castellanos-Gomez A, Wojtaszek M, Tombros N, Agraït N, van Wees BJ, Rubio-Bollinger G. Atomically thin mica flakes and their application as ultrathin insulating substrates for graphene. Small. 2011;7(17):2491.
[5]
Pacile D, Meyer JC, Girit CO, Zettl A. The two-dimensional phase of boron nitride: few-atomic-layer sheets and suspended membranes. Appl Phys Lett. 2008;92(13):133107.CrossRef
[6]
Dean CR, Young AF, Meric I, Lee C, Wang L, Sorgenfrei S, Watanabe K, Taniguchi T, Kim P, Shepard KL, Hone J. Boron nitride substrates for high-quality graphene electronics. Nat Nanotechnol. 2010;5(10):722.CrossRef
[7]
Castellanos-Gomez A, Agraït N, Rubio-Bollinger G. Optical identification of atomically thin dichalcogenide crystals. Appl Phys Lett. 2010;96(21):213116.CrossRef
[8]
Late DJ, Liu B, Matte HSSR, Rao CNR, Dravid VP. Rapid characterization of ultrathin layers of chalcogenides on SiO2/Si substrates. Adv Funct Mater. 2012;22(9):1894.CrossRef
[9]
Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A. Single-layer MoS2 transistors. Nat Nanotechnol. 2011;6(3):147.CrossRef
[10]
Splendiani A, Sun L, Zhang Y, Li T, Kim J, Chim CY, Galli G, Wang F. Emerging photoluminescence in monolayer MoS2. Nano Lett. 2010;10(4):1271.CrossRef
[11]
Benameur MM, Radisavljevic B, Héron JS, Sahoo S, Berger H, Kis A. Visibility of dichalcogenide nanolayers. Nanotechnology. 2011;22(12):125706.CrossRef
[12]
Li L, Yu Y, Ye GJ, Ge Q, Ou X, Wu H, Feng D, Chen XH, Zhang Y. Black phosphorus field-effect transistors. Nat Nanotechnol. 2014;9(5):372.CrossRef
[13]
Koenig SP, Doganov RA, Schmidt H, Castro Neto AH, Ozyilmaz B. Electric field effect in ultrathin black phosphorus. Appl Phys Lett. 2014;104(10):103106.CrossRef
[14]
Fei R, Yang L. Strain-engineering the anisotropic electrical conductance of few-layer black phosphorus. Nano Lett. 2014;14(5):2884.CrossRef
[15]
Podzorov V, Gershenson ME, Kloc C, Zeis R, Bucher E. Novel high-mobility field-effect transistors based on transition metal dichalcogenides. Appl Phys Lett. 2004;84(17):3301.CrossRef
[16]
Akinwande D, Petrone N, Hone J. Two-dimensional flexible nanoelectronics. Nat Commun. 2014;5:5678.CrossRef
[17]
Larentis S, Fallahazad B, Tutuc E. Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers. Appl Phys Lett. 2012;101(22):223104.CrossRef
[18]
Lee YH, Zhang XQ, Zhang W, Chang MT, Lin CT, Chang KD, Yu YC, Wang JTW, Chang CS, Li LJ, Lin TW. Synthesis of large-area mos2 atomic layers with chemical vapor deposition. Adv Mater. 2012;24(17):2320.CrossRef
[19]
Shi Y, Zhou W, Lu AY, Fang W, Lee YH, Hsu AL, Kim SM, Kim KK, Yang HY, Li LJ, Idrobo JC, Kong J. van der Waals epitaxy of MoS2 layers using graphene as growth templates. Nano Lett. 2012;12(6):2784.CrossRef
[20]
Nicolosi V, Chhowalla M, Kanatzidis MG, Strano MS, Coleman JN. Liquid exfoliation of layered materials. Science. 2013;340(6139):1226419.CrossRef
[21]
Li H, Lu G, Wang Y, Yin Z, Cong C, He Q, Wang L, Ding F, Yu T, Zhang H. Mechanical exfoliation and characterization of single- and few-layer nanosheets of WSe2, TaS2, and TaSe2. Small. 2013;9(11):1974.CrossRef
[22]
Li H, Wu J, Huang X, Lu G, Yang J, Lu X, Xiong Q, Zhang H. Rapid and reliable thickness identification of two-dimensional nanosheets using optical microscopy. ACS Nano. 2013;7(11):10344.CrossRef
[23]
Childres I, Jauregui LA, Foxe M, Tian J, Jalilian R, Jovanovic I, Chen YP. Effect of electron-beam irradiation on graphene field effect devices. Appl Phys Lett. 2010;97(17):173109.CrossRef
[24]
Wu RJ, Odlyzko ML, Mkhoyan KA. Determining the thickness of atomically thin MoS2 and WS2 in the TEM. Ultramicroscopy. 2014;147:8.CrossRef
[25]
Lee C, Yan H, Brus LE, Heinz TF, Hone J, Ryu S. Anomalous lattice vibrations of single- and few-layer MoS2. ACS Nano. 2010;4(5):2695.CrossRef
[26]
Ferrari AC, Meyer JC, Scardaci V, Casiraghi C, Lazzeri M, Mauri F, Piscanec S, Jiang D, Novoselov KS, Roth S, Geim AK. Raman spectrum of graphene and graphene layers. Phys Rev Lett. 2006;97(18):187401.CrossRef
[27]
Blake P, Hill EW, Castro Neto AH, Novoselov KS, Jiang D, Yang R, Booth TJ, Geim AK. Making graphene visible. Appl Phys Lett. 2007;91(6):063124.CrossRef
[28]
Ni ZH, Wang HM, Kasim J, Fan HM, Yu T, Wu YH, Feng YP, Shen ZX. Graphene thickness determination using reflection and contrast spectroscopy. Nano Lett. 2007;7(9):2758.CrossRef
[29]
Jung I, Pelton M, Piner R, Dikin DA, Stankovich S, Watcharotone S, Hausner M, Ruoff RS. Simple approach for high-contrast optical imaging and characterization of graphene-based sheets. Nano Lett. 2007;7(12):3569.CrossRef
[30]
Wang YP, Zhou HJ, Zhao GH, Xia TL, Wang L, Wang L, Zhang LY. Rapidly counting atomic planes of ultra-thin MoSe2 nanosheets (1 ≤ n≤4) on SiO2/Si substrate. Rare Met. 2016;35(8):632.CrossRef
[31]
Ouyang WG, Liu XZ, Li QY, Zhang YY, Yang JR, Zheng QS. Optical methods for determining thickness of few-layer graphene flakes. Nanotechnology. 2013;24(50):505701.CrossRef
[32]
Chen H, Fei W, Zhou J, Miao C, Guo W. Layer identification of colorful black phosphorus. Small. 2017;13(5):1602336.CrossRef
[33]
Jung I, Rhyee JS, Son JY, Ruoff RS, Rhee KY. Colors of graphene and graphene-oxide multilayers on various substrates. Nanotechnology. 2012;23(2):25708.CrossRef
Metadata
Title
Rapid and nondestructive layer number identification of two-dimensional layered transition metal dichalcogenides
Authors
Jia-Peng Wu
Le Wang
Li-Yuan Zhang
Publication date
21-06-2017
Publisher
Nonferrous Metals Society of China
Published in
Rare Metals / Issue 9/2017
Print ISSN: 1001-0521
Electronic ISSN: 1867-7185
DOI
https://doi.org/10.1007/s12598-017-0927-4

Other articles of this Issue 9/2017

Rare Metals 9/2017 Go to the issue

OriginalPaper

Zinc tin oxide thin films prepared by MOCVD with different Sn/Zn ratios

OriginalPaper

Cu(In,Ga)Se2 absorbers prepared by electrodeposition for low-cost thin-film solar cells

OriginalPaper

Coercivity, microstructure, and thermal stability of sintered Nd–Fe–B magnets by grain boundary diffusion with TbH3 nanoparticles

OriginalPaper

Improving color rendering index of Mn-doped ZnO nanorods on silicon-based substrate

OriginalPaper

Self-etching Ni–Co hydroxides@Ni–Cu nanowire arrays with enhancing ultrahigh areal capacitance for flexible thin-film supercapacitors

OriginalPaper

Hydrogen storage properties of Nb-compounds-catalyzed LiBH4–MgH2

Premium Partners

    Image Credits