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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 22/2018

22-09-2018

Reduction of leakage current at the SiNx/GaN interface in GaN Schottky diodes

Authors: Sowmya Kolli, Mahendra Sunkara, Bruce Alphenaar

Published in: Journal of Materials Science: Materials in Electronics | Issue 22/2018

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Abstract

The breakdown characteristics for a GaN wrapround field plate diode are compared to those of a planar diode and a mesa diode to determine the improvement due to the field plate geometry. Mesa diodes exhibit a higher breakdown voltage compared to planar diodes, in agreement with simulation models. Wraparound field plate diodes, however, show high leakage current resulting in lower breakdown values than predicted. It is found that the extra leakage is caused by damage from the plasma enhanced chemical vapor deposition of the SiNx used to form the field plate. To mitigate the leakage current, atomic layer deposition was used to put down a protective Al2O3 prior to SiNx deposition. This significantly reduced the leakage current and raised the breakdown voltage of the wraparound Schottky diodes.
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Appendix
Available only for authorised users
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Metadata
Title
Reduction of leakage current at the SiNx/GaN interface in GaN Schottky diodes
Authors
Sowmya Kolli
Mahendra Sunkara
Bruce Alphenaar
Publication date
22-09-2018
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 22/2018
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-0064-3

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